Method of forming a conductive contact

A conductive contact of a semiconductor device, the conductive contact disposed within an opening having sidewalls and extending through an insulative layer to an underlying silicon-comprising substrate comprising an active area;

• the contact comprising thermally annealed, boron-doped titanium nitride overlying a layer of titanium silicide disposed on the silicon-comprising substrate;
• the contact comprising a chlorine concentration of less than about 3% by wt., and an amount of boron effective to provide the conductive contact with a level of adhesion to the insulative layer within the opening to substantially eliminate peeling of the conductive contact from the sidewalls of the opening, and a level of thermal stress to substantially eliminate cracking of the insulative layer;
• and an amount of nitrogen effective to maintain the conductivity of the contact at a predetermined level for an effective electrical contact with the active area.

A semiconductor circuit, comprising:

• a conductive contact comprising thermally annealed titanium nitride having a chlorine concentration of less than about 3% by wt., and disposed within a contact opening extending through an insulative layer to an underlying silicon-comprising substrate of a semiconductor device, a layer comprising titanium silicide overlying the silicon-comprising substrate;
• the contact opening defined by sidewalls.

A conductive contact, comprising:

• thermally annealed titanium nitride and less than about 4% by wt. chlorine, the contact situated within an opening and having a thickness of about 200 angstroms or greater.

A conductive contact, comprising:

• titanium boronitride and less than about 4% by wt. chlorine.

A conductive contact, comprising:

• heat-treated titanium nitride and less than about 4% by wt. chlorine, the contact having a thickness of about 200 angstroms or greater, and situated within an opening having an aspect ratio of about 3:1 or greater.

A conductive contact, comprising:

• heat-treated titanium boronitride disposed within an opening in a substrate, and less than about 4% by wt. chlorine.

A conductive contact, comprising:

• heat-treated titanium nitride and less than about 4% by wt chlorine, the contact having a thickness of about 200 angstroms or greater and disposed in an opening having an aspect ratio of about 3:1 or greater.

A conductive contact, comprising:

• heat-treated titanium boronitride and less than about 4% by wt chlorine, the contact having a thickness of about 200 angstroms or greater and disposed in an opening having an aspect ratio of about 3:1 or greater.

A conductive contact disposed in an opening having insulative sidewalls, and comprising:

• heat-treated titanium boronitride, less than about 4% by wt chlorine, and an amount of boron for effective adhesion of the contact to the insulative sidewalls of the opening to substantially eliminate peeling of the contact from the sidewalls.

An integrated circuit supported by a substrate and comprising a conductive contact comprising:

• heat-treated titanium nitride and less than about 4% by wt. chlorine, the contact situated within an opening and having a thickness of about 200 angstroms or greater.

An integrated circuit supported by a substrate and comprising a conductive contact comprising:

• heat-treated titanium boronitride and less than about 4% by wt. chlorine.

A semiconductor device, comprising:

• a layer of heat-treated titanium nitride comprising less than about 4% chlorine on a substrate, the titanium nitride layer situated within an opening and having a thickness of about 200 angstroms or greater.

A semiconductor device, comprising:

• a layer of titanium boronitride comprising less than about 4% chlorine disposed on a substrate.

A semiconductor device, comprising:

• a layer of heat-treated titanium nitride comprising less than about 4% chlorine disposed on a substrate, the titanium nitride layer having a thickness of about 200 angstroms or greater;
• and
• a conductive layer over the titanium nitride layer.

A semiconductor device, comprising:

• a layer of titanium boronitride comprising less than about 4% chlorine disposed on a substrate;
• and
• a conductive layer disposed over the titanium nitride layer.

A semiconductor device, comprising:

• a contact disposed in an opening in an insulative layer, and comprising titanium boronitride and less than about 4% chlorine;
• and
• an interconnect disposed over the insulative layer and connected to the contact.

A barrier layer disposed on a substrate, comprising:

• a layer of heat-treated titanium nitride comprising less than about 4% by wt. chlorine, the titanium nitride layer having a thickness of about 200 angstroms or greater.

A barrier layer disposed on a substrate, comprising:

• a layer of heat-treated titanium boronitride comprising less than about 4% by wt. chlorine.