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US 6,888,243 B2Granted
Semiconductor device
AssigneeRenesas Technology Corp.
InventorYasuo Yamaguchi
Life of this patent
Estimating the term…
Abstract
To improve the radiation property without inhibiting miniaturization of the device, heat generated at a heat generating layer (5) is radiated to a substrate (1) via plugs (7, 17), wiring layers (8, 18), and plugs (9, 19). A cross sectional along the principal plane of the substrate (1) of the plugs (7, 9, 17, 19) is set to be a rectangle, and the long sides of the rectangle are parallel to the direction perpendicular to the direction connecting one end and the other end of the heat generating layer (5). Between the plugs (9, 19) and the semiconductor layer (2) is interposed n-type semiconductor layers (3, 13).
Claims20
A semiconductor device comprising:
- a substrate having a principal plane;
- an insulation layer formed on said principal plane;
- a heat generating layer embedded in said insulation layer and opposing to said principal plane with a part of said insulation layer interposed between the heat generating layer and the substrate;
- a first wiring layer disposed on said insulation layer;
- a second wiring layer disposed on said insulation layer;
- a first plug embedded in said insulation layer, a lower end of the first plug being connected to one end of said heat generating layer and an upper end of the first plug being connected to said first wiring layer, said first plug having a rectangular cross sectional shape along said principal plane of which short sides are parallel to a main direction connecting said one end and the other end of said heat generating layer and long sides are parallel to a direction perpendicular to said main direction;
- a second plug embedded in said insulation layer, a lower end of the second plug being connected to said other end of said heat generating layer and an upper end of the second plug connected to said second wiring layer;
- and
- a third plug embedded in said insulation layer, an upper end of the third plug being connected to said first wiring layer or said first plug and a lower end of the third plug reaching said principal plane, wherein each of the first, second and third plugs is conductive.
6 more elements
A semiconductor device comprising:
- a substrate having a principal plane;
- an insulation layer formed on said principal plane and made of a low dielectric constant insulator;
- a heat generating layer embedded in said insulation layer and opposing to said principal plane with a part of said insulation layer interposed between the heat generating layer and the substrate;
- a first wiring layer disposed on said insulation layer;
- a second wiring layer disposed on said insulation layer;
- a first plug embedded in said insulation layer, a lower end of the first plug being connected to one end of said heat generating layer and an upper end of the first plug being connected to said first wiring layer;
- a second plug embedded in said insulation layer, a lower end of the second plug being connected to an other end of said heat generating layer and an upper end of the second plug being connected to said second wiring layer;
- and
- a third plug embedded in said insulation layer, an upper end of the third plug being connected to said first wiring layer or said first plug and a lower end of the third plug reaching said principal plane, wherein each of the first, second and third plugs is conductive.
6 more elements
A semiconductor device comprising:
- a semiconductor substrate having a principal plane;
- an insulation layer formed on said principal plane;
- a heat generating layer embedded in said insulation layer and opposing to said principal plane with a part of said insulation layer interposed between the heat generating layer and the semiconductor substrate;
- a first wiring layer disposed on said insulation layer;
- a second wiring layer disposed on said insulation layer;
- a first plug embedded in said insulation layer, a lower end of the first plug being connected to one end of said heat generating layer and an upper end of the first plug being connected to said first wiring layer;
- a second plug embedded in said insulation layer, a lower end of the second plug being connected to an other end of said heat generating layer and an upper end of the second plug being connected to said second wiring layer;
- and
- a third plug embedded in said insulation layer, an upper end the third plug being connected to said first wiring layer or said first plug and a lower end of the third plug reaching said principal plane, the third plug forming a Schottky barrier between the third plug and said semiconductor substrate, wherein each of the first, second and third plugs is conductive.
6 more elements
Dependencies are inferred from the claim text.