Semiconductor device and manufacturing method for the same
AssigneeSharp Kabushiki Kaisha
InventorNobuaki Tokushige
Life of this patent
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Abstract
A semiconductor device comprising a semiconductor layer and one, or a plurality of, semiconductor elements formed on a surface of the semiconductor layer, characterized in that said semiconductor layer is divided into a plurality of pieces in a region wherein said semiconductor layer does not have a semiconductor element and in that the respective pieces of the divided semiconductor layer have a flexible region made of an insulating layer adhered to the sides of the respective pieces so that the pieces are integrated.
Claims7
A semiconductor device comprising:
- a semiconductor layer and one, or a plurality of, semiconductor elements formed on the semiconductor layer,
- wherein said semiconductor layer is divided into a plurality of pieces in a region wherein said semiconductor layer does not have a semiconductor element and in that the respective pieces of the divided semiconductor layer have a flexible region comprising an insulating layer adhered to the sides of the respective pieces so that the pieces are integrated, and
- a feedthrough electrode extending through the semiconductor layer from a top surface to a bottom surface of the semiconductor layer.
A semiconductor device comprising:
- a semiconductor layer and one, or a plurality of, semiconductor elements formed on the semiconductor layer,
- wherein said semiconductor layer is divided into a plurality of pieces in a region wherein said semiconductor layer does not have a semiconductor element and wherein the respective pieces of the divided semiconductor layer have a flexible region comprising an insulating layer adhered to the sides of the respective pieces so that the pieces are integrated;
- and
- wherein the respective pieces of the divided semiconductor layer have rigid regions integrated via the insulating layer by means of feedthrough electrodes adhering to the insulating layer and extending from the top surface to the rear surface of said semiconductor layer.
A semiconductor device, comprising:
- a rigid region wherein one, or a plurality of, semiconductor elements is formed on a surface of a semiconductor layer;
- and
- a flexible region wherein a semiconductor element is not provided in the surface of said semiconductor layer,
- wherein the flexible region is provided with semiconductor layers and insulating layers adhered to each other in an alternating manner;
- wherein a feedthrough electrode extending from the top surface to the rear surface of the semiconductor layer and electrically separated from said semiconductor layer is further provided in the rigid region.
A semiconductor device comprising:
- a semiconductor layer and one, or a plurality of, semiconductor elements formed on the semiconductor layer,
- wherein said semiconductor layer is divided into a plurality of pieces in a region wherein said semiconductor layer does not have a semiconductor element and wherein the respective pieces of the divided semiconductor layer have a flexible region comprising an insulating layer adhered to the sides of the respective pieces so that the pieces are integrated;
- and
- wherein the insulating layer has a recess in a surface thereof.
Dependencies are inferred from the claim text.