Integrated structure with microwave components
AssigneeHoneywell International Inc.
InventorThomas R. Keyser
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a silicon layer and a first dielectric layer. A transistor has a drain and a source that are at least partially in the silicon layer. The transistor further has a gate and a spacer defining the gate. The first dielectric layer forms the spacer. A capacitor has first and second electrodes, the first electrode is formed at least partially in the silicon layer, and the first dielectric layer provides a dielectric for the capacitor between the first and second electrodes. A resistor has a resistive region formed at least partially in the silicon layer and has first and second resistor contact areas defined by the first dielectric layer. A second dielectric layer electrically isolates the transistor, the capacitor, and the resistor from conductive lines.
Claims35
A semiconductor device comprising:
- a silicon layer;
- a dielectric layer;
- a transistor having a heavily doped drain and a heavily doped source formed at least partially in the silicon layer, the transistor further having a gate and a spacer defining distances between the heavily doped source and the gate and between the heavily doped drain and the gate, wherein the spacer is provided by the dielectric layer;
- and,
- a capacitor having first and second electrodes, wherein the first electrode is formed at least partially in the silicon layer, and wherein the dielectric layer provides a dielectric for the capacitor between the first and second electrodes.
A semiconductor device comprising:
- a silicon layer;
- a dielectric layer;
- a transistor having a heavily doped drain and a heavily doped source formed at least partially in the silicon layer, the transistor further having a gate and a spacer defining distances between the heavily doped source and the gate and between the heavily doped drain and the gate, wherein the spacer is provided by the dielectric layer;
- and,
- a resistor having a resistive region formed at least partially in the silicon layer, and first and second resistor contact areas defined by the dielectric layer.
A semiconductor device comprising:
- a silicon layer;
- a dielectric layer;
- a transistor having a heavily doped drain and a heavily doped source formed at least partially in the silicon layer, the transistor further having a gate and a spacer defining distances between the heavily doped source and the gate and between the heavily doped drain and the gate, wherein the spacer is provided by the dielectric layer;
- a capacitor having first and second electrodes, wherein the first electrode is formed at least partially in the silicon layer, and wherein the dielectric layer provides a dielectric for the capacitor between the first and second electrodes;
- and,
- a resistor having a resistive region formed at least partially in the silicon layer, and first and second resistor contact areas defined by the dielectric layer.
A microwave circuit comprising:
- an SOI wafer including a single crystal silicon layer and an insulating layer;
- a transistor having a gate, a source, and a drain, wherein the source and drain are formed in the single crystal silicon layer;
- and,
- first and second passive circuit elements formed in the single crystal silicon layer.
A semiconductor device comprising:
- a silicon layer;
- a dielectric layer;
- a transistor having a drain and a source formed at least partially in the silicon layer, the transistor further having a gate and a spacer, wherein the spacer abuts a side of the gate, and wherein the spacer is provided by the dielectric layer;
- and,
- a capacitor having first and second electrodes, wherein the first electrode is formed at least partially in the silicon layer, and wherein the dielectric layer provides a dielectric for the capacitor between the first and second electrodes.
A semiconductor device comprising:
- a silicon layer;
- a dielectric layer;
- a resistor having a resistive region formed at least partially in the silicon layer, and first and second resistor contact areas defined by the dielectric layer;
- and,
- a capacitor having first and second electrodes, wherein the first electrode is formed at least partially in the silicon layer, and wherein the dielectric layer provides a dielectric for the capacitor between the first and second electrodes.
Dependencies are inferred from the claim text.