High-voltage diode
AssigneeInfineon Technologies AG
InventorsAnton Mauder, Alfred Porst
Life of this patent
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Abstract
A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1×1017 to 3×1018 dopant atoms per cm3 for the anode emitter, especially on its surface 1019 dopant atoms per cm3 or more for the cathode emitter and approximately 1016 dopant atoms per cm3 for the blocking function of an anode-side zone.
Claims11
A high-voltage diode, comprising:
- an anodal p-conducting zone being doped with a dose of 1.3−3×1012 dopant atoms cm−2;
- a cathodal n−-conducting drift zone forming a pn junction with said anodal p-conducting zone;
- a p+-conducting anode emitter disposed in said anodal p-conducting zone, said anodal p-conducting zone being lighter doped than said p+-conducting anode emitter, said p+-conducting anode emitter having a relatively high surface concentration doping with only a small penetration depth, said p+-conducting anode emitter having a dopant dose lying between 5×1012 dopant atoms cm−2 and 2×1013 dopant atoms cm−2;
- an anode metallization layer adjoining said p+-conducting anode emitter;
- a cathode metallization layer;
- an n+-conducting cathode emitter adjoining said cathode metallization layer;
- and
- an n-conducting zone disposed between said cathodal n−-conducting drift zone and said n+-conducting cathode emitter.
A method for producing a high-voltage diode having an anodal p-conducting zone, a cathodal n−-conducting drift zone forming a pn junction with the anodal p-conducting zone, a p+-conducting anode emitter disposed in the anodal p-conducting zone, an anode metallization layer adjoining said p+-conducting anode emitter, an n+-conducting cathode emitter, a cathode metallization layer adjoining the n+-conducting cathode emitter, and an n-conducting zone disposed between the cathodal n−-conducting drift zone and the n+-conducting cathode emitter, the method which comprises the steps of:
- implanting the anodal p-conducting zone adjoining the pn junction with a dose of 1.3−3×1012 dopant atoms cm−2 and implanted dopant atoms of the anodal p-conducting zone being diffused out with a diffusion width of about 2 μm;
- implanting the p+-conducting anode emitter with a dose of between 5×1012 dopant atoms cm−2 and 2×1013 dopant atoms cm−2, so that the anodal p-conducting zone being lighter doped than the p+-conducting anode emitter, the p+-conducting anode emitter having a relatively high surface concentration doping with a shallow penetration depth;
- and
- implanting the n+-conducting cathode emitter with dopant atoms having a dose such that a doping concentration of the n+-conducting cathode emitter is above 1019 dopant atoms cm−3 at a surface.
Dependencies are inferred from the claim text.