Triple gate device having strained-silicon channel
AssigneeUnited Microelectronics Corp.
InventorsWen-Shiang Liao, Wei-Tsun Shiau
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Abstract
A three-dimensional Triple-Gate (Tri-gate) device having a three-sided strained silicon channel and superior drive current is provided. The Tri-gate device includes a composite fin structure consisting of a silicon germanium core and a three-sided strained silicon epitaxy layer grown from surface of said silicon germanium core. A gate strip wraps a channel portion of the composite fin structure. Two distal end portions of the composite fin structure not covered by the gate strip constitute source/drain regions of the Tri-gate device. A high quality gate insulating layer is interposed between the composite fin structure and the gate strip.
Claims10
A three dimensional Triple Gate (Tri-gate) device comprising:
- a composite fin structure consisting of a silicon germanium core and a strained silicon epitaxy layer grown from surface of said silicon germanium core;
- a gate strip wrapping a portion of said composite fin structure, wherein portions of said composite fin structure not covered by said gate strip constitute source/drain regions of said Tri-gate device;
- and
- a gate insulating layer interposed between said composite fin structure and said gate strip.
A Tri-gate device comprising:
- a composite fin structure consisting of a semiconductor core and a strained epitaxy layer grown from surface of said semiconductor core, said semiconductor core having a first lattice constant that miss-matches a second lattice constant of said strained epitaxy layer;
- a gate strip wrapping a portion of said composite fin structure, wherein portions of said composite fin structure not covered by said gate strip constitute source/drain regions of said Tri-gate device;
- and
- a gate insulating layer interposed between said composite fin structure and said gate strip.
Dependencies are inferred from the claim text.