Device and method for providing shielding in radio frequency integrated circuits to reduce noise coupling

A shielding structure for a radio frequency integrated circuit (RFIC), wherein the RFIC includes a first structural layer having at least one RF passive component and a second structural layer having routing for active components, the shielding structure comprising:

• a first conductive shielding layer positioned between the first and second structural layers, wherein the first conductive layer has at least one opening formed therein;
• a second conductive shielding layer positioned between the first and second structural layers and proximate to the first conductive shielding layer, wherein the second conductive shielding layer has a second opening formed therein;
• and
• a guard ring connected to the first and second conductive shielding layers, wherein the first and second conductive shielding layers are connected to a common voltage potential.

A method for providing shielding in an integrated circuit formed on a substrate, the method comprising:

• forming a first structural layer on the substrate, wherein the first structural layer comprises either metal routing or radio frequency passive (RF) components;
• forming a first shielding layer above the first structural layer;
• patterning the first shielding layer to form at least one opening in the first shielding layer;
• and
• forming a second structural layer above the first shielding layer, wherein the second structural layer comprises RF passive components if the first structural layer comprises metal routing, and wherein the second structural layer comprises metal routing if the first structural layer comprises RF passive components.

A semiconductor device having a substrate, the device comprising:

• a metal routing layer for an active circuit formed proximate to the substrate;
• a radio frequency (RF) layer having at least one RF component formed therein;
• and
• a first metal shielding layer positioned between the routing layer and the RF layer, wherein the first metal shielding layer has a first opening formed therein.