Method of forming dummy copper plug to improve low k structure mechanical strength and plug fill uniformity

A method of providing for a stable structure by creating dummy plugs through at a layer of low-k dielectric material, comprising the steps of:

• providing a semiconductor substrate, said substrate having been provided with multiple layers of metal interconnect traces separated by a layer of low-k dielectric;
• depositing a layer of etch stop material over said substrate;
• depositing a layer of low-k dielectric material said layer of etch stop material;
• etching holes for a pattern of dummy plugs through said layer of low-k dielectric material and through said layer of etch stop material, extending the dummy plugs into the surface of the underlying substrate, said pattern of dummy plugs being adjusted for maximum stress reduction in said layer of low-k dielectric material and said layer of etch stop material, said pattern of dummy plugs further being adjusted to eliminate effects of uneven plug fill during creation of the dummy plugs;
• and
• filling said holes with a metal, thereby providing for creating a stable and strengthened stack of overlying interconnect traces separated by a layer of low-k dielectric while further allowing for a reduction in dummy plug density.

A method of providing for a stable structure by creating dummy copper plugs through a layer of low-k dielectric material, comprising the steps of:

• providing a semiconductor substrate, said substrate having been provided with multiple layers of metal interconnect traces separated by a layer of insulating material;
• depositing a layer of etch stop material over said substrate;
• depositing a layer of low-k dielectric material over said layer of etch stop material;
• etching holes for a pattern of dummy plugs through said layer of low-k dielectric material and through said layer of etch stop material, extending the dummy plugs into the surface of the underlying substrate, said pattern of dummy plugs being adjusted for maximum stress reduction in said layer of low-k dielectric material and said layer of etch stop material, said pattern of dummy plugs further being adjusted to eliminate effects of uneven plug fill during creation of the dummy plugs;
• and
• filling said holes with copper, thereby providing for creating a stable and strengthened stack of overlying interconnect traces separated by said layer of low-k dielectric while further allowing for a reduction in dummy plug density.

A method of providing for a stable structure by creating dummy plugs as part of the creation of semiconductor devices, comprising the steps of:

• providing a semiconductor substrate, said substrate having been provided with multiple layers of metal interconnect traces separated by at least one layer of insulating material;
• depositing a first layer of etch stop material over said substrate;
• depositing a first layer of insulating material over said first layer of etch stop material;
• depositing at least one second layer of etch stop material over said first layer of insulating material;
• depositing at least one second layer of insulating material over said at least one second layer of etch stop material;
• etching holes for a pattern of dummy plugs through said at least one second layer of insulating material and through said at least one second layer of etch stop material, extending the dummy plugs into the surface of the underlying first layer of insulating material, said pattern of dummy plugs being adjusted for maximum stress reduction in said at least one second layer of insulating material and said at least one second layer of etch stop material and said first layer of insulating material, said pattern of dummy plugs further being adjusted to eliminate effects of uneven plug fill during creation of the dummy plugs;
• and
• filling said holes with a metal, thereby providing for creating a stable and strengthened stack of overlying interconnect traces separated by said at least one second layer of insulating material and said at least one second layer of etch stop material while further allowing for a reduction in dummy plug density.

A method of providing for a stable structure by creating dummy plugs through at least one layer of low-k dielectric material, comprising the steps of:

• providing a semiconductor substrate, said substrate having been provided with multiple layers of metal interconnect traces separated by at least one layer of low-k dielectric;
• depositing a first layer of etch stop material over said substrate;
• depositing a first layer of low-k dielectric material over said first layer of etch stop material;
• depositing at least one second layer of etch stop material over said first layer of low-k dielectric material;
• depositing at least one second layer of low-k dielectric material over said at least one second layer of etch stop material;
• etching holes for a pattern of dummy plugs through said at least one second layer of low-k dielectric material and through said at least one second layer of etch stop material, extending the dummy plugs into the surface of the underlying first layer of low-k dielectric material, said pattern of dummy plugs being adjusted for maximum stress reduction in said at least one second layer of low-k dielectric material and said at least one second layer of etch stop material and said first layer of low-k dielectric material, said pattern of dummy plugs further being adjusted to eliminate effects of uneven plug fill during creation of the dummy plugs;
• and
• filling said holes with a metal, thereby providing for creating a stable and strengthened stack of overlying interconnect traces separated by said at least one second layer of low-k dielectric material and said at least one second layer of etch stop material while further allowing for a reduction in dummy plug density.

A method of providing for a stable structure by creating dummy copper plugs through at least one layer of low-k dielectric material, comprising the steps of:

• providing a semiconductor substrate, said substrate having been provided with multiple layers of metal interconnect traces separated by at least one layer of low-k dielectric material;
• depositing a first layer of etch stop material over said substrate;
• depositing a first layer of low-k dielectric material over said first layer of etch stop material;
• depositing at least one second layer of etch stop material over said first layer of low-k dielectric material;
• depositing at least one second layer of low-k dielectric material over said at least one second layer of etch stop material;
• etching holes for a pattern of dummy plugs through said at least one second layer of low-k dielectric material and through said at least one second layer of etch stop material, extending said dummy plugs into the surface of the underlying first layer of low-k dielectric material, said pattern of dummy plugs being adjusted for maximum stress reduction in said at least one second layer of low-k dielectric material and said at least one second layer of etch stop material and said first layer of low-k dielectric material, said pattern of dummy plugs further being adjusted to eliminate effects of uneven plug fill during creation of the dummy plugs;
• and
• filling said holes with copper, thereby providing for creating a stable and strengthened stack of overlying interconnect traces separated by said at least one second layer of low-k dielectric material and said at least one second layer of etch stop material while further allowing for a reduction in dummy plug density.

A method of providing for a stable structure by creating dummy plugs as part of the creation of semiconductor devices, comprising the steps of:

• providing a semiconductor substrate, said substrate having been provided with multiple layers of metal interconnect traces separated by a layer of insulating material;
• depositing a first layer of etch stop material over said substrate;
• depositing a first layer of semiconductor material over said first layer of etch stop material;
• depositing at least one second layer of etch stop material over said first layer of semiconductor material;
• depositing at least one second layer of insulating material over said at least one second layer of etch stop material;
• etching holes for a pattern of dummy plugs through said at least one second layer of insulating material and through said at least one second layer of etch stop material, extending said dummy plugs into the surface of the underlying layer of semiconductor material, said pattern of dummy plugs being adjusted for maximum stress reduction in said at least one second layer of insulating material and said at least one second layer of etch stop material and said underlying layer of semiconductor material, said pattern of dummy plugs further being adjusted to eliminate effects of uneven plug fill during creation of the dummy plugs;
• and
• filling said holes with a metal, thereby providing for creating a stable and strengthened stack of overlying interconnect traces separated by said at least one second layer of insulating material and said at least one second layer of etch stop material while further allowing for a reduction in dummy plug density.

A method of providing for a stable structure by creating dummy plugs through at least one layer of low-k dielectric material, comprising the steps of:

• providing a semiconductor substrate, said substrate having been provided with multiple layers of metal interconnect traces separated by a layer of insulating material;
• depositing a first layer of etch stop material over said substrate;
• depositing a first layer of low-k dielectric material over said first layer of etch stop material;
• depositing at least one second layer of etch stop material over said first layer of low-k dielectric material;
• depositing at least one second layer of low-k dielectric material over said at least one second layer of etch stop material;
• etching holes for a pattern of dummy plugs through said at least one second layer of low-k dielectric material and through said at least one second layer of etch stop material, extending the dummy plugs into the surface of the underlying first layer of low-k dielectric material, said pattern of dummy plugs being adjusted for maximum stress reduction in said at least one second layer of low-k dielectric material and said at least one second layer of etch stop material and said first layer of low-k dielectric material, said pattern of dummy plugs further being adjusted to eliminate effects of uneven plug fill during creation of the dummy plugs;
• and
• filling said holes with a metal, thereby providing for creating a stable and strengthened stack of overlying interconnect traces separated by said at least one second layer of low-k dielectric material and by said at least one second layer of etch stop material while further allowing for a reduction in dummy plug density.

A method of providing for a stable structure by creating dummy copper plugs through at least one layer of low-k dielectric material, comprising the steps of:

• providing a semiconductor substrate, said substrate having been provided with multiple layers of metal interconnect traces separated by a layer of insulating material;
• depositing a first layer of etch stop material over said substrate;
• depositing a first layer of low-k dielectric material over said first layer of etch stop material;
• depositing at least one second layer of etch stop material over said first layer of low-k dielectric material;
• depositing at least one second layer of low-k dielectric material over said at least one second layer of etch stop material;
• etching holes for a pattern of dummy plugs through said at least one second layer of low-k dielectric material and through said at least one second layer of etch stop material, extending said dummy plugs into the surface of the underlying first layer of low-k dielectric material, said pattern of dummy plugs being adjusted for maximum stress reduction in said at least one second layer of low-k dielectric material and said at least one second layer of etch stop material and said first layer of low-k dielectric material, said pattern of dummy plugs further being adjusted to eliminate effects of uneven plug fill during creation of the dummy plugs;
• and
• filling said holes with copper, thereby providing for creating a stable and strengthened stack of overlying interconnect traces separated by said at least one second layer of low-k dielectric material and said at least one second layer of etch stop material while further allowing for a reduction in dummy plug density.