Semiconductor device and method for fabricating the same
AssigneeSeiko Epson Corporation
InventorYutao Kobayashi
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Abstract
The invention provides a semiconductor device and a method of fabricating the same in which the side faces and chip edge of an IC chip obtained by dicing a semiconductor wafer are coated with an overcoat film. A method of fabricating a semiconductor device in accordance with the present invention includes: 1) preparing a semiconductor wafer on which semiconductor elements are formed, 2) dicing the semiconductor wafer along scribed lines at a depth of 20 μm or more to form grooves 4-along the scribed lines, 3) forming an overcoat film on the necessary parts of the semiconductor wafer including the surfaces of the grooves, 4) optionally forming a thick electrode, and 5) dividing the semiconductor wafer into individual IC chips and chip size packages by dicing the semiconductor wafer along the grooves.
Claims19
A method of fabricating a semiconductor device, comprising:
- a semiconductor wafer preparation step of preparing a semiconductor wafer on which semiconductor elements are formed;
- a half cutting step of dicing the semiconductor wafer along scribed lines at a depth of 20 μm or more to form grooves extending at least half the thickness of the semiconductor wafer along the scribed lines;
- an overcoat film formation step of forming an overcoat film on the entire upper face of the semiconductor wafer including the surfaces of the grooves;
- and
- a full cutting step of dicing the semiconductor wafer along the grooves to divide the semiconductor wafer into individual IC chips.
A semiconductor device, comprising:
- an IC chip having side faces, an upper face and a thickness;
- and
- an overcoat film extending to the side faces of the IC chip so as to cover at least 20 μm of the thickness of the IC chip and extending over the upper face of the IC chip;
- the semiconductor device being fabricated by preparing a semiconductor wafer on which semiconductor elements are formed, dicing the semiconductor wafer along scribed lines at a depth of 20 μm or more to form grooves extending at least half the thickness of the semiconductor wafer along the scribed lines, forming the overcoat film on the entire upper face of the semiconductor wafer including the surfaces of the grooves, and dicing the semiconductor wafer along the grooves.
Dependencies are inferred from the claim text.