Method for manufacturing a bipolar junction transistor
AssigneeTexas Instruments Incorporated
InventorsGregory E. Howard, Angelo Pinto
Life of this patent
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Abstract
According to one embodiment of the invention, a method used in manufacturing an intermediate structure in a bipolar junction transistor includes implanting a base dopant in a semiconductor substrate to form a base, forming a dielectric layer outwardly from the semiconductor substrate, etching a portion of the dielectric layer to form an emitter region, forming an emitter polysilicon layer on the semiconductor substrate, and after forming the emitter polysilicon layer, annealing the semiconductor substrate.
Claims13
A method of manufacturing a bipolar junction transistor, comprising:
- implanting a first base dopant in a semiconductor substrate;
- after implanting the first base dopant, annealing the semiconductor substrate;
- forming a first oxide layer outwardly from the semiconductor substrate;
- forming a first nitride layer outwardly from the first oxide layer;
- etching a first portion of the first nitride layer and the first oxide layer to form an emitter region;
- forming an emitter polysilicon layer on the semiconductor substrate;
- after forming the emitter polysilicon layer, annealing the semiconductor substrate;
- implanting an emitter dopant in the emitter polysilicon layer;
- etching a portion of the emitter polysilicon layer, a second portion of the first nitride layer and the first oxide layer to form an emitter polysilicon region having sidewalls;
- forming nitride regions on the sidewalls;
- implanting a second base dopant in the semiconductor substrate;
- and
- after implanting the second base dopant, annealing the semiconductor substrate to form an emitter and highly-doped base regions.
A method of manufacturing a bipolar junction transistor structure, comprising:
- forming isolation regions in a semiconductor substrate;
- forming an epitaxial silicon layer outwardly from the semiconductor substrate;
- implanting a first base dopant in the semiconductor substrate;
- after implanting the first base dopant, annealing the semiconductor substrate;
- forming a first oxide layer outwardly from the epitaxial silicon layer;
- forming a first nitride layer outwardly from the first oxide layer;
- etching a first portion of the first nitride layer and the first oxide layer to form an emitter region;
- forming an emitter polysilicon layer on the semiconductor substrate;
- after forming the emitter polysilicon layer, annealing the semiconductor substrate;
- implanting an emitter dopant in the emitter polysilicon layer;
- etching a portion of the emitter polysilicon layer, a second portion of the first nitride layer and the first oxide layer to form an emitter polysilicon region having sidewalls;
- forming a second oxide layer outwardly from the epitaxial silicon layer, the emitter polysilicon region and the sidewalls;
- forming a second nitride layer outwardly from the second oxide layer;
- anisotropically etching the second nitride layer, thereby forming nitride regions on the sidewalls;
- implanting a second base dopant in the epitaxial silicon layer;
- and
- after implanting the second base dopant, annealing the semiconductor substrate to form an emitter and highly-doped base regions.
Dependencies are inferred from the claim text.