LDD-type miniaturized MOS transistors
AssigneeSTMicroelectronics S.r.l.
InventorsFrançois Guyader, Franck Arnaud
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Abstract
The invention concerns a method for forming, in a substrate (1) having a first type of conductivity, a MOS transistor, comprising the following steps: a) forming on the substrate an insulated gate (3); b) implanting a doping agent having a second type of conductivity; c) forming on the edges of the gate silicon nitride spacers; d) simultaneously oxidising the apparent surfaces of the substrate, the gate and the spacers; and e) drain and source implantation.
Claims17
A method for forming, in a substrate of a first conductivity type, a MOS transistor, comprising the steps of:
- a) forming an insulated gate on the substrate;
- b) implanting a dopant of a second conductivity type;
- c) forming silicon nitride spacers on edges of the gate;
- d) simultaneously oxidizing exposed surfaces of the substrate, of the gate, and of the spacers;
- and
- e) performing a drain and source implantation.
A MOS transistor comprising, in a substrate of a first conductivity type, a channel defined by an insulated gate provided with lateral silicon nitride spacers formed on the substrate, lightly-doped first regions of a second conductivity type separating the channel from heavily-doped second regions of the second conductivity type, the first and second regions being formed on either side of the gate, the first and second regions sharing a boundary that is spaced laterally from the spacers.
A method for forming a MOS transistor, comprising:
- forming an insulated gate on a channel region of a substrate of a first conductivity type;
- forming a first lightly-doped region of a second conductivity type in the substrate and adjacent to the channel region;
- forming a first spacer on the substrate, above the first lightly-doped region and immediately adjacent to a first side of the gate;
- forming an insulating layer that covers the gate, the first spacer, and a first portion of the substrate laterally adjacent to the first spacer;
- and
- forming a first heavily-doped region in the substrate by implanting dopants through a first portion of the insulating layer that covers the first portion of the substrate.
A MOS transistor, comprising:
- a substrate of a first conductivity type;
- an insulated gate formed on the substrate and defining a channel in the substrate below the gate;
- a first spacer formed on the substrate and immediately adjacent to a first side of the gate;
- a first lightly-doped region of a second conductivity type formed in the substrate adjacent to the channel;
- and
- a first heavily-doped region of the second conductivity type formed in the substrate and separated from the channel by the first lightly-doped region, the first lightly-doped and heavily-doped regions sharing a boundary that is spaced laterally from the first spacer.
Dependencies are inferred from the claim text.