Test element group, method of manufacturing a test element group, method of testing a semiconductor device, and semiconductor device

A method of evaluating a semiconductor device by evaluating from characteristics of first thin film transistors contained in a first panel, characteristics of second thin film transistors contained in a second panel of the semiconductor device,

• wherein:
• the first thin film transistors are formed by fewer processing steps than the second thin film transistors;
• a process of manufacturing the first thin film transistors and a process of manufacturing the second thin film transistors both comprising:
• forming a semiconductor film;
• crystallizing the semiconductor film;
• forming an insulating film in contact with the crystallized semiconductor film;
• etching the insulating film so as to expose a portion of the crystallized semiconductor film;
• adding an impurity to the crystallized semiconductor film, thereby forming a channel region and impurity regions in contact with the channel region;
• forming a conductive film so as to cover the crystallized semiconductor film and the insulating film;
• and
• etching the conductive film, thereby forming an electrode over the channel region with the insulating film interposed therebetween,
• wherein a first panel and a second panel belong to a same lot in at least one of the manufacturing processes, and
• wherein two electrodes in contact with the impurity regions are formed at the same time in the first thin film transistors at the step of forming the electrode over the channel region,
• whereby a dispersion in the respective characteristics of the second thin film transistors contained in the second panel is evaluated from a dispersion in the respective characteristics of the first thin film transistors contained in the first panel.

A method of evaluating a semiconductor device by evaluating from characteristics of first thin film transistors contained in a first panel, characteristics of second thin film transistors contained in a second panel of the semiconductor device,

• wherein:
• the first thin film transistors are formed by fewer processing steps than the second thin film transistors;
• a process of manufacturing the first thin film transistors and a process of manufacturing the second thin film transistors both comprising:
• forming a semiconductor film;
• etching the semiconductor film so as to form an island shaped semiconductor film;
• forming an insulating film in contact with the island shaped semiconductor film;
• etching the insulating film so as to expose a portion of the island shaped semiconductor film;
• adding an impurity to the island shaped semiconductor film, thereby forming a channel region and impurity regions in contact with the channel region;
• forming a conductive film so as to cover the island shaped semiconductor film and the insulating film;
• and
• etching the conductive film, thereby forming an electrode over the channel region with the insulating film interposed therebetween,
• wherein a first panel and a second panel belong to a same lot in at least one of the manufacturing processes, and
• wherein two electrodes in contact with the impurity regions are formed at the same time in the first thin film transistors at the step of forming the electrode over the channel region,
• whereby a dispersion in the respective characteristics of the second thin film transistors contained in the second panel is evaluated from a dispersion in the respective characteristics of the first thin film transistors contained in the first panel.

A method of evaluating a semiconductor device by evaluating from characteristics of first thin film transistors contained in a first panel, characteristics of second thin film transistors contained in a second panel of the semiconductor device,

• wherein:
• the first thin film transistors are formed by fewer processing steps than the second thin film transistors;
• a process of manufacturing the first thin film transistors and a process of manufacturing the second thin film transistors both comprising:
• forming a semiconductor film;
• crystallizing the semiconductor film;
• etching the crystallized semiconductor film so as to form an island shaped semiconductor film;
• forming an insulating film in contact with the island shaped semiconductor film;
• etching the insulating film so as to expose a portion of the island shaped semiconductor film;
• adding an impurity to the island shaped semiconductor film, thereby forming a channel region and impurity regions in contact with the channel region;
• forming a conductive film so as to cover the semiconductor film and the insulating film;
• and
• etching the conductive film, thereby forming an electrode over the channel region with the insulating film interposed therebetween,
• wherein a first panel and a second panel belong to a same lot in at least one of the manufacturing processes, and
• wherein two electrodes in contact with the impurity regions are formed at the same time in the first thin film transistors at the step of forming the electrode over the channel region,
• whereby a dispersion in the respective characteristics of the second thin film transistors contained in the second panel is evaluated from a dispersion in the respective characteristics of the first thin film transistors contained in the first panel.

A method of evaluating a semiconductor device by evaluating from characteristics of a first thin film transistor contained in the semiconductor device, characteristics of a second thin film transistor contained in the semiconductor device,

• wherein:
• the first thin film transistor and the second thin film transistor are formed over a same substrate;
• the first thin film transistor is formed by fewer processing steps than the second thin film transistor;
• a process of manufacturing the first thin film transistor and a process of manufacturing the second thin film transistor both comprising:
• forming a semiconductor film;
• forming an insulating film in contact with the semiconductor film;
• etching the insulating film so as to expose a portion of the semiconductor film;
• adding an impurity to the semiconductor film so as to form a channel region and impurity regions in contact with the channel region;
• forming a conductive film so as to cover the semiconductor film and the insulating film;
• and
• etching the conductive film, thereby forming an electrode over the channel region with the insulating film interposed therebetween,
• wherein two electrodes in contact with the impurity regions are formed at the same time in the first thin film transistor at the step of forming the electrode over the channel region,
• whereby a dispersion in the characteristics of the second thin film transistor is evaluated from a dispersion in the characteristics of the first thin film transistor.

A method of evaluating a semiconductor device by evaluating from characteristics of a first thin film transistor contained in the semiconductor device, characteristics of a second thin film transistor contained in the semiconductor device,

• wherein:
• the first thin film transistor and the second thin film transistor are formed over a same substrate;
• the first thin film transistor is formed by fewer processing steps than the second thin film transistor;
• a process of manufacturing the first thin film transistor and a process of manufacturing the second thin film transistor both comprising:
• forming a semiconductor film;
• crystallizing the semiconductor film;
• forming an insulating film in contact with the crystallized semiconductor film;
• etching the insulating film so as to expose a portion of the crystallized semiconductor film;
• adding an impurity to the crystallized semiconductor film so as to form a channel region and impurity regions in contact with the channel region;
• forming a conductive film so as to cover the crystallized semiconductor film and the insulating film;
• and
• etching the conductive film, thereby forming an electrode over the channel region with the insulating film interposed therebetween,
• wherein two electrodes in contact with the impurity regions are formed at the same time in the first thin film transistor at the step of forming the electrode over the channel region,
• whereby a dispersion in the characteristics of the second thin film transistor is evaluated from a dispersion in the characteristics of the first thin film transistor.

A method of evaluating a semiconductor device by evaluating from characteristics of a first thin film transistor contained in the semiconductor device, characteristics of a second thin film transistor contained in the semiconductor device,

• wherein:
• the first thin film transistor and the second thin film transistor are formed over a same substrate;
• the first thin film transistor is formed by fewer processing steps than the second thin film transistor;
• a process of manufacturing the first thin film transistor and a process of manufacturing the second thin film transistor both comprising:
• forming a semiconductor film;
• etching the semiconductor film so as to form an island shaped semiconductor film;
• forming an insulating film in contact with the island shaped semiconductor film;
• etching the insulating film so as to expose a portion of the island shaped semiconductor film;
• adding an impurity to the island shaped semiconductor film so as to form a channel region and impurity regions in contact with the channel region;
• forming a conductive film so as to cover the island shaped semiconductor film and the insulating film;
• and
• etching the conductive film, thereby forming an electrode over the channel region with the insulating film interposed therebetween,
• wherein two electrodes in contact with the impurity regions are formed at the same time in the first thin film transistor at the step of forming the electrode over the channel region,
• whereby a dispersion in the characteristics of the second thin film transistor is evaluated from a dispersion in the characteristics of the first thin film transistor.

A method of evaluating a semiconductor device by evaluating from characteristics of a first thin film transistor contained in the semiconductor device, characteristics of a second thin film transistor contained in the semiconductor device,

• wherein:
• the first thin film transistor and the second thin film transistor are formed over a same substrate;
• the first thin film transistor is formed by fewer processing steps than the second thin film transistor;
• a process of manufacturing the first thin film transistor and a process of manufacturing the second thin film transistor both comprising:
• forming a semiconductor film;
• crystallizing the semiconductor film;
• etching the crystallized semiconductor film so as to form an island shaped semiconductor film;
• forming an insulating film in contact with the island shaped semiconductor film;
• etching the insulating film so as to expose a portion of the island shaped semiconductor film;
• adding an impurity to the island shaped semiconductor film so as to form a channel region and impurity regions in contact with the channel region;
• forming a conductive film so as to cover the island shaped semiconductor film and the insulating film;
• and
• etching the conductive film, thereby forming an electrode over the channel region with the insulating film interposed therebetween,
• wherein two electrodes in contact with the impurity regions are formed at the same time in the first thin film transistor at the step of forming the electrode over the channel region,
• whereby a dispersion in the characteristics of the second thin film transistor is evaluated from a dispersion in the characteristics of the first thin film transistor.