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US 6,887,722 B2Granted
Method for exposing a semiconductor wafer
AssigneeInfineon Technologies SC300 GmbH & Co. KG
InventorsThorsten Schedel, Torsten Seidel
Life of this patent
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Abstract
A method for exposing a semiconductor wafer compensates for the effects of process inhomogeneities, e.g. in semiconductor etching or deposition processes, by individually adjusting sets of exposure parameters of an exposure tool for any exposure field. The exposure parameters are preferably the dose and the focus, which are varied across the semiconductor wafer.
Claims7
A method for exposing a semiconductor wafer by adjusting exposure parameters of an exposure tool and projecting a pattern of a matrix configuration of exposure fields on the semiconductor wafer, the method which comprises:
- in a first step, dividing the matrix configuration of exposure fields into at least two areas, providing a plurality of sets of exposure parameters including a dose and a focus of the exposure tool, and correlating each of the areas with a different one of the plurality of sets of exposure parameters;
- in a second step, exposing each one of the exposure fields using a respective one of the plurality of sets of exposure parameters correlated with a respective one of the areas associated with the one of the exposure fields;
- performing the first step and the second step on the semiconductor wafer, which has been coated with a passivation layer and a resist configured on the passivation layer;
- and
- providing each one of the plurality of sets of exposure parameters in accordance with a property of the passivation layer underlying the resist.
2 more elements
Dependencies are inferred from the claim text.