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US 6,884,303 B2Granted
Process of thinning and blunting semiconductor wafer edge and resulting wafer
AssigneeInternational Rectifier Corporation
InventorRichard Francis
Life of this patent
Estimating the term…
Abstract
A wafer having a rounded edge is thinned to 100 microns or less, producing a tapered razor like edge. The edge is ground to blunt it and reduce danger to personnel and equipment during handling of the wafer.
Claims16
A semiconductor device wafer comprising:
- a semiconductor wafer sliced from a drawn ingot, said sliced wafer having a first major surface, a second major surface opposing said first major surface, and a thickness less than 100 microns;
- individual semiconductor die residing at said first major surface of said wafer;
- blunt peripheral edge extending between said first major surface and said second major surface, wherein said edge is perpendicular to said first and second major surfaces.
A semiconductor device wafer comprising:
- a semiconductor wafer sliced from a drawn ingot, said sliced wafer having a first major surface, a second major surface opposing said first major surface, and a thickness less than 100 microns;
- individual semiconductor die residing at said first major surface of said wafer;
- mechanically shaped peripheral edge extending between said first major surface and said second major surface, wherein said peripheral edge is blunted by said mechanical shaping of said peripheral surface and wherein said edge is perpendicular to said first and second major surfaces.
Dependencies are inferred from the claim text.