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US 6,855,965 B2Granted
Method of manufacturing a semiconductor component and semiconductor component thereof
AssigneeFreescale Semiconductor, Inc.
InventorsDarrell G. Hill, Mariam G. Sadaka, Jonathan K. Abrokwah
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor component and the component thereof includes forming a dielectric layer (620) over a portion of a passivation ledge (640) in an emitter layer (280) and overlapping a base contact (660) onto the dielectric layer (620).
Claims20
A semiconductor component comprising:
- (a) a semiconductor substrate having an emitter layer, a base layer and a collector layer, wherein the base layer is over the collector layer, and the emitter layer has a surface passivation ledge disposed on the base layer;
- (b) a dielectric layer formed over the passivation ledge;
- and
- (c) a base contact overlying a portion of the base layer and overlapping onto the dielectric layer, whereby an exposed portion of the base layer is adjacent the emitter layer and the base contact, and the emitter layer is not in physical contact with the base contact.
1 more element
A heterojunction bipolar transistor (HBT) comprising:
- a) a substrate layer, a subcollector layer, a collector layer, a base layer and an emitter layer, each layer formed on top of the preceding layer;
- b) an emitter mesa and a passivating ledge formed in the emitter layer;
- and
- c) base contacts deposited on the base layer wherein the base contacts are self aligned with respect to the passivation ledge and are laterally spaced apart from the entire emitter layer.
1 more element
A semiconductor component comprising:
- (a) a semiconductor substrate having an emitter layer, a base layer a collector layer, wherein the base layer is over the collector layer, and the emitter layer has a surface passivation ledge disposed on the base layer,
- (b) a dielectric layer formed over the passivation ledge;
- and
- (c) a base contact overlying a portion of the base layer and overlapping onto the dielectric layer, wherein the emitter layer is not in physical contact with the base contact.
1 more element
A seminconductor component comprising:
- (a) a semiconductor substrate having an emitter layer, a base layer and a collector layer, wherein the base layer is over the collector layer, and the emitter layer has a surface passivation ledge disposed on the base layer;
- (b) a dielectric layer formed over the passivation ledge;
- and
- (c) a base contact overlying a portion of the base layer and overlapping onto the dielectric layer, wherein the base contact is laterally spaced apart from the entire emitter layer.
1 more element
A heterojunction bipolar transistor (HBT) comprising:
- a) a substrate layer, a subcollector layer, a collector layer, a base layer and an emitter layer, each layer formed on top of the preceding layer;
- b) an emitter mesa and a passivating ledge formed in the emitter layer;
- c) base contacts deposited on the base layer wherein the base contacts are self aligned with respect to the passivation ledge;
- and
- d) a dielectric layer overlying at least a portion of the passivating ledge, wherein the emitter layer is not in physical contact with the base contact.
2 more elements
Dependencies are inferred from the claim text.