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US 6,855,963 B1Granted
Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate
AssigneeInternational Business Machines Corporation
InventorsJack O. Chu, Qiqing C. Ouyang
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Abstract
A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.
Claims74
A high-electron-mobility layer semiconductor structure comprising:
- an SGOI substrate comprising a SiGe layer on insulator having Ge content ranging between 30-40% and ranging in thickness between 20 nm-30 nm, and having a p-type doping concentration ranging between 1e14 cm−3-5e17 cm−3;
- an epitaxial Si0.95Ge0.05 seed layer grown on top of said SiGe layer and ranging in thickness between 0 nm-5 nm;
- a regrown Si1-xGex buffer layer grown on top of said seed layer and ranging in thickness between 20 nm-30 nm and having Ge content x ranging between 10%-40%;
- an epitaxial tensile strained Si layer grown on top of said buffer layer and ranging in thickness between 5 nm-7 nm;
- an epitaxial Si1-yGey spacer layer grown on top of said strained Si layer and ranging in thickness between 3 nm-5 nm and having Ge content y ranging between 30-40%;
- an epitaxial Si1-zGez supply layer grown on top of said spacer layer ranging in thickness between 2 nm-8 nm and having a n-type doping concentration ranging between 2e18 cm−3-2e19 cm−3 and having Ge content ranging between 35-50%;
- and,
- an epitaxial tensile strained Si cap layer grown on top of said supply layer ranging in thickness between 0 nm-3 nm and having a n-type doping concentration ranging between 5e17 cm−3-5e19 cm−3.
5 more elements
A high-electron-mobility field effect transistor comprising:
- an SGOI substrate comprising a SiGe layer on insulator having Ge content ranging between 30-40% and ranging in thickness between 20 nm-30 nm, and having a p-type doping concentration ranging between 1e14 cm−3-5e17 cm−3;
- a regrown Si1-xGex buffer layer grown on top of said SiGe layer and ranging in thickness between 20 nm-30 nm, and having a Ge content x of 30-40%;
- an epitaxial tensile strained Si layer grown on top of said buffer layer and ranging in thickness between 5 nm-7 nm;
- an epitaxial Si1-yGey spacer layer grown on top of said strained Si layer and ranging in thickness between 3 nm-5 nm and having Ge content ranging between 30-40%;
- an epitaxial Si1-zGez supply layer grown on top of said spacer layer ranging in thickness between 2 nm-8 nm and having a n-type doping concentration ranging between 2e18 cm−3-2e19 cm−3 and having Ge content ranging between 35-50%;
- an epitaxial tensile strained Si cap layer grown on top of said supply layer ranging in thickness between 0 nm-3 nm and having a n-type doping concentration ranging between 5e17 cm−3-5e19 cm−3;
- a gate dielectric layer formed on top of said strained Si cap layer and having an equivalent oxide thickness in a range of 0-1 nm;
- a gate conductor formed on top of said gate dielectric layer;
- a drain region having a n-type doping concentration greater than 5e19 cmM3;
- and,
- a source region having a n-type doping concentration greater than 5e19 cm−3.
8 more elements
A high-electron-mobility layer semiconductor structure comprising:
- an SGOI substrate comprising a Si1-xGex layer on insulator ranging in thickness between 10 nm-50 nm;
- an epitaxial Si0.95Ge0.05 seed layer grown on top of said SiGe layer and ranging in thickness between 0 nm-5 nm;
- an epitaxial Si1-yGey supply layer grown on top of said seed layer ranging in thickness between 2 nm-8 nm and having a n-type doping concentration ranging between 1e18 cm−1-5e19 cm−3;
- and,
- an epitaxial Si1-yGey spacer layer grown on top of said supply layer and ranging in thickness between 3 nm-5 nm;
- an epitaxial tensile strained Si layer grown on top of said spacer layer and ranging in thickness between 3 nm-10 nm;
- an epitaxial Si1-yGey spacer layer grown on top of said strained Si layer and ranging in thickness between 1 nm-2 nm;
- and,
- an epitaxial tensile strained Si cap layer grown on top of said spacer layer ranging in thickness between 0 nm-2 nm.
6 more elements
A high-electron-mobility field effect transistor comprising:
- an SGOI substrate comprising a SiGe layer on insulator having Ge content ranging between 30-40% and ranging in thickness between 20 nm-30 nm;
- an epitaxial Si1-zGez supply layer grown on top of said SiGe layer ranging in thickness between 2.5 nm-8 nm and having a n-type doping concentration ranging between 2e18 cm−3-2e19 cm−3 and having Ge content ranging between 35-50%;
- an epitaxial Si1-yGey spacer layer grown on top of said supply layer and ranging in thickness between 3 nm-5 nm and having Ge content ranging between 30-40%;
- an epitaxial tensile strained Si channel layer grown on top of said spacer layer ranging in thickness between 5 nm-7 nm and having a doping concentration less than 1e16 cm−3;
- an epitaxial Si1-yGey spacer layer grown on top of said Si channel layer and ranging in thickness between 1 nm-2 nm and having Ge content ranging between 30-40%;
- an epitaxial tensile strained Si cap layer grown on top of said spacer layer ranging in thickness between 0 nm-2 nm;
- a gate dielectric layer formed on top of said strained Si cap layer and having an equivalent oxide thickness in a range of 0-1 nm;
- a gate conductor formed on top of said gate dielectric layer;
- a drain region having a n-type doping concentration greater than 5e19 cm−3;
- and,
- a source region having a n-type doping concentration greater than 5e19 cm−3.
8 more elements
A high-electron-mobility layer semiconductor structure comprising:
- an SGOI substrate comprising a Si1-zGez supply layer ranging in thickness between 2 nm-8 nm and having a n-type doping concentration ranging between 1e18 cm−3-5e19 cm−3;
- and,
- an epitaxial Si1-yGey spacer layer grown on top of said supply layer and ranging in thickness between 3 nm-5 nm;
- an epitaxial tensile strained Si layer grown on top of said spacer layer and ranging in thickness between 3 nm-10 nm;
- an epitaxial Si1-yGey spacer layer grown on top of said strained Si layer and ranging in thickness between 1 nm-2 nm;
- and,
- an epitaxial tensile strained Si cap layer grown on top of said spacer layer ranging in thickness between 0 nm-2 nm.
4 more elements
A high-electron-mobility layer semiconductor structure comprising:
- an SGOI substrate comprising a SiGe layer on insulator ranging in thickness between 10 nm-50 nm, and having a n-type doping concentration ranging between 1e17 cm−3-5e19 cm−3;
- a Si1-xGex regrown buffer layer grown on top of said SiGe layer and ranging in thickness between 10 nm-50 nm and serving as a bottom spacer layer;
- an epitaxial tensile strained Si layer grown on top of said regrown buffer layer and ranging in thickness between 3 nm-10 nm;
- an epitaxial Si1-yGey spacer layer grown on top of said strained Si layer and ranging in thickness between 3 nm-5 nm;
- an epitaxial Si1-zGez supply layer grown on top of said spacer layer ranging in thickness between 2 nm-8 nm and having a n-type doping concentration ranging between 1e18 cm−3-5e19 cm−3;
- and,
- an epitaxial tensile strained Si cap layer grown on top of said supply layer ranging in thickness between 0 nm-3 nm and having a n-type doping concentration ranging between 5e17 cm−3-5e19 cm−3.
4 more elements
A high-hole-mobility layer semiconductor structure comprising:
- an SGOI substrate comprising an epitaxial Si1-jGej supply layer ranging in thickness between 5 nm-25 nm, and having a p-type doping concentration ranging between 1e18-5e19 cm−3;
- an epitaxial Si1-kGek spacer layer grown on top of said supply layer and ranging in thickness between 3 nm-7 nm;
- an epitaxial compressively strained Si1-mGem channel layer grown on top of said spacer layer and ranging in thickness between 5 nm-20 nm;
- and,
- an epitaxial strained Si1-nGen cap layer grown on top of said strained Si1-mGem channel layer and ranging in thickness between 2 nm-10 nm.
2 more elements
Dependencies are inferred from the claim text.