Method of using amorphous carbon to prevent resist poisoning
AssigneeAdvanced Micro Devices, Inc.
InventorsSrikanteswara Dakshina-Murthy, Scott A. Bell, Richard J. Huang, Richard C. Nguyen, Cyrus E. Tabery
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Abstract
An exemplary embodiment relates to a method of using an amorphous carbon layer to prevent photoresist poisoning. The method includes doping a first amorphous carbon layer located above a substrate, providing an oxide layer above the first amorphous carbon layer where the oxide layer has a pinhole, and providing a second amorphous carbon layer adjacent to the oxide layer. The second amorphous carbon layer is undoped and the second amorphous carbon layer helps prevent photoresist poisoning.
Claims20
A method of using an amorphous carbon layer to prevent photoresist poisoning, the method comprising:
- doping a first amorphous carbon layer located above a substrate;
- providing an oxide layer above the first amorphous carbon layer, the oxide layer containing a defect;
- providing a second amorphous carbon layer adjacent to the oxide layer, wherein the second amorphous carbon layer is undoped and the second amorphous carbon layer helps prevent photoresist poisoning, wherein doping a first amorphous carbon layer includes providing a dopant containing nitrogen to enhance etch resistance.
A method of using an amorphous carbon layer to prevent photoresist poisoning, the method comprising:
- doping a first amorphous carbon layer located above a substrate;
- providing an oxide layer above the first amorphous carbon layer, the oxide layer containing a defect;
- providing a second amorphous carbon layer adjacent to the oxide layer, wherein the second amorphous carbon layer is undoped and the second amorphous carbon layer helps prevent photoresist poisoning, wherein the oxide layer includes SiON.
A method of using an amorphous carbon layer to prevent photoresist poisoning the method comprising:
- doping a first amorphous carbon layer located above a substrate;
- providing an oxide layer above the first amorphous carbon layer, the oxide layer containing a defect;
- providing a second amorphous carbon layer adjacent to the oxide layer, wherein the second amorphous carbon layer is undoped and the second amorphous carbon layer helps prevent photoresist poisoning, wherein doping a first amorphous carbon layer includes providing a nitrogen doping to enhance etch resistance.
A method of preventing photoresist poisoning using an undoped amorphous carbon layer, the method comprising:
- providing a doped amorphous carbon layer above a substrate;
- providing a SiON layer above the doped amorphous carbon layer;
- and
- providing an undoped amorphous carbon layer above the doped amorphous carbon layer.
A method of preventing resist poisoning, the method comprising:
- providing a doped basic layer above a substrate, the doped basic layer including amorphous carbon doped with at least nitrogen;
- providing an oxide layer above the doped basic layer;
- and
- forming an undoped layer along the oxide layer.
Dependencies are inferred from the claim text.