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US 6,855,615 B2Granted
Method of manufacturing semiconductor device having an improved isolation structure
AssigneeRenesas Technology Corp.
InventorShigeki Komori
Life of this patent
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Abstract
A trench is formed on a primary surface of a semiconductor substrate, and is filled with trench material to separate the surface region of the semiconductor substrate into plural active regions. At least a portion of the surface of the trench material adjoining the semiconductor substrate is depressed by a predetermined depth with reference to the primary surface of the semiconductor device. Thus, prevented is a decrease in a drain current of a semiconductor device having a trench isolation structure.
Claims1
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a trench for a trench isolation structure on a primary surface of a semiconductor substrate through a mask pattern formed on the primary surface of said semiconductor substrate;
- forming an insulating layer on the surface of said mask pattern formed on the primary surface of said semiconductor substrate so as to fill said trench;
- removing said insulating layer substantially to the height of the primary surface of said mask pattern;
- removing said mask pattern;
- and
- removing said insulating layer at least at a portion adjoining said semiconductor substrate to recede from the primary surface of said semiconductor substrate by a predetermined depth thereby forming a trench isolation structure so that an obtuse angle is formed between the primary surface of said semiconductor substrate and a side surface of the semiconductor substrate adjoining said trench isolation structure, and a curved surface is formed so as to extend from the primary surface to the side surface of said semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.