Semiconductor device with selectable gate thickness and method of manufacturing such devices
AssigneeInteruniversitair Microelektronica Centrum (IMEC)
InventorsMalgorzata Jurczak, Rita Rooyackers, Emmanuel Augendre, Goncal Badenes
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Abstract
A method of forming layers, in the same device material, with different thickness or layer height in a semiconductor device comprises forming device material layer or gate electrode layer disposable parts in selected regions of the device layer. The disposable parts can be formed by doping the selected regions to the desired depth d. The as-deposited thickness t of this device layer can be adjusted or modulated after the patterning of the individual devices by removing the disposable parts.
Claims22
A method of forming a structure in a device layer of an electronic component, the method comprising:
- forming a device layer on a substrate;
- forming at least one disposable part in a selected region of the device layer, wherein the disposable part comprises a material that is substantially the same as the device layer and within the thickness of the device layer;
- patterning the device layer in the selected region;
- and
- selectively removing the at least one disposable part from the device layer.
An integrated circuit, comprising a device layer having at least a first and second region, wherein the first region has a different thickness than that of the second region, wherein the difference in thickness between the first and second regions is produced from formation of a disposable part in the device layer and removal of the disposable part to form the first and second regions after the device has been patterned.
A partially completed integrated circuit, comprising a device layer having at least a first and second region, wherein, at least within a thickness of the first region, a disposable portion is formed such that the disposable portion is removable so as to change the thickness of the first region such that the first region has a different thickness than the second region.
An apparatus configured to form topography in a device layer of an electronic component or a device made using semiconductor processing techniques, the apparatus comprising:
- means for forming a device layer on a substrate;
- means for forming at least one disposable part in a selected region of the device layer, wherein the disposable part is formed from the same material as the device layer and within the thickness of the device layer;
- means for patterning the device layer in the selected region;
- and
- means for selectively removing the at least one disposable part from the device layer.
A method of manufacturing a semiconductor device having a device layer with a varying thickness, comprising:
- outlining at least one selected region of the device layer;
- forming at least one disposable part in the at least one selected region of the device layer, wherein the disposable part is formed to a predefined depth of the device layer;
- patterning the device layer in at least the selected region;
- and
- selectively removing the disposable part from the device layer.
Dependencies are inferred from the claim text.