Gate-controlled, negative resistance diode device using band-to-band tunneling
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMin-Hwa Chi
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Abstract
A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a barrier region. The barrier region is in contact with the emitter region and is laterally adjacent to the emitter region. The semiconductor layer contains a collector region. A drift region comprises the semiconductor layer between the barrier region and the collector region. Finally, a gate comprises a conductor layer overlying the drift region, the barrier region, and at least a part of the emitter region with an insulating layer therebetween. A method of manufacture is achieved.
Claims11
A method to form a gate-controlled, BBT transit diode device in the manufacture of an integrated circuit device comprising:
- providing a semiconductor layer in a substrate;
- implanting ions into said semiconductor layer to form an emitter region;
- implanting ions into said semiconductor layer to form a barrier region;
- forming an insulator layer overlying said semiconductor layer;
- depositing a conductor layer overlying said insulator layer;
- patterning said conductor layer to form a gate wherein said gate overlies said barrier region and at least a part of said emitter region;
- and
- thereafter implanting ions into said semiconductor layer to form a collector region and to complete said diode device in the manufacture of said integrated circuit device wherein a drift region is formed in said semiconductor layer where said gate overlies said semiconductor between said collector region and said barrier region.
A method to form a gate-controlled, BBT transit diode device in the manufacture of an integrated circuit device comprising:
- providing a semiconductor layer in a substrate;
- forming an emitter region and a barrier region in said semiconductor layer by implanting ions into said semiconductor layer with a common masking layer and performing a common annealing process;
- forming an insulator layer overlying said semiconductor layer;
- depositing a conductor layer overlying said insulator layer;
- patterning said conductor layer to form a gate wherein said gate overlies said barrier region and at least a put of said emitter region;
- and
- thereafter implanting ions into said semiconductor layer to form a collector region and to complete said diode device in the manufacture of said integrated circuit device wherein a drift region is formed in said semiconductor layer where said gate overlies said semiconductor between said collector region and said barrier region.
Dependencies are inferred from the claim text.