US 6,855,585 B1 · Integrating multiple thin film resistors

Abstract

A method for forming multiple resistors on a substrate. The method initially includes providing a first resistor on the substrate. A first dielectric layer is deposited, patterned, and selectively etched over the first resistor. Second resistor material is provided over the first dielectric layer. Furthermore, landing pad material is provided over the second resistor material. The landing pad material and the second resistor material are then selectively etched. The selective etching forms contacts for the first resistor in a first region, and forms a second resistor and associated contacts in a second region.

Claims16

Dependent claims

A method for forming multiple resistors on a substrate, comprising:

first providing a first resistor;
first depositing, patterning, and selectively etching a first dielectric layer over the first resistor;
second providing second resistor material over the first dielectric layer;
third providing landing pad material over the second resistor material;
and
selectively etching said landing pad material and said second resistor material, where said selectively etching forms contacts for the first resistor in a first region, and forms a second resistor and associated contacts in a second region.

3 more elements

Dependencies are inferred from the claim text.

Integrating multiple thin film resistors

Life of this patent

Integrating multiple thin film resistors

Life of this patent

Abstract

Claims16