Lithographic method and apparatus
AssigneeASML Netherlands B.V.
InventorsJozef M Finders, Johannes J Baselmans, Donis G Flagello, Igor P Bouchoms
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Abstract
A method of imaging a pattern in a microlithographic exposure apparatus includes performing two exposures, each with a different mask, the superposition of the images defined by the two masks produces the complete circuit pattern. A dipolar illumination mode is used for each exposure, the dipoles of the two exposures being mutually perpendicular. The dipolar illumination mode of the first exposure is used to image mask features parallel to a first direction, and the dipolar illumination mode of the second exposure is used to image mask features perpendicular to the first direction.
Claims19
A method of imaging a patterned structure onto a substrate provided with a layer of energy-sensitive material, comprising:
- performing a first exposure to image a first pattern;
- performing a second exposure to image a second pattern,
- wherein at least one of said first and second exposures is performed using an illumination mode having a substantially dipolar intensity distribution, and wherein at least one of said patterns which is imaged using the illumination mode having a substantially dipolar intensity distribution comprises features oriented substantially perpendicular to an axis joining respective two poles of the substantially dipolar intensity distribution.
A method of imaging a patterned structure onto a substrate provided with a layer of energy-sensitive material, comprising:
- performing an exposure to image a pattern using an illumination mode having a substantially dipolar intensity distribution,
- wherein the pattern imaged using the illumination mode having the substantially dipolar intensity distribution comprises features oriented substantially perpendicular to an axis joining respective two poles of the substantially dipolar intensity distribution.
Dependencies are inferred from the claim text.