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US 6,855,485 B2Granted
Pattern forming method and apparatus for fabricating semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorShigeo Irie
Life of this patent
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Abstract
A resist film is formed out of a resist material on a substrate, and then pre-baked. Next, the pre-baked resist film is exposed to extreme ultraviolet radiation through a photomask. Then, the exposed resist film is developed, thereby defining a resist pattern on the substrate. The pre-baking and exposing steps are carried out in a vacuum without subjecting the resist film to the air.
Claims12
A pattern forming method comprising the steps of:
- a) forming a resist film on a substrate;
- b) pre-baking the resist film;
- c) exposing the pre-baked resist film to extreme ultraviolet radiation;
- and
- d) developing the exposed resist film, thereby defining a resist pattern on the substrate,
- wherein the steps b) and c) are carried out in a vacuum.
3 more elements
A pattern forming method comprising the steps of:
- a) forming a resist film on a substrate in a first processing chamber containing air or an inert gas;
- b) pre-baking the resist film in a vacuum in a second processing chamber;
- c) transporting the pre-baked resist film in line to a vacuum in a third processing chamber and then exposing the pre-baked resist film to extreme ultraviolet radiation in the third processing chamber;
- and
- d) transporting the exposed resist film in line to the first processing chamber and then developing the exposed resist film in the first processing chamber, thereby defining a resist pattern on the substrate.
2 more elements
A pattern forming method comprising the steps of:
- a) forming a resist film out of a chemically amplified resist material on a substrate;
- b) pre-baking the resist film;
- c) exposing the pre-baked resist film to extreme ultraviolet radiation;
- d) post-baking the exposed resist film;
- and
- e) developing the post-baked resist film, thereby defining a resist pattern on the substrate,
- wherein the steps b), c) and d) are carried out in a vacuum.
4 more elements
A pattern forming method comprising the steps of:
- a) forming a resist film out of a chemically amplified resist material on a substrate in a first processing chamber containing air or an inert gas;
- b) pre-baking the resist film in a vacuum in a second processing chamber;
- c) transporting the pre-baked resist film in line to a vacuum in a third processing chamber and then exposing the pre-baked resist film to extreme ultraviolet radiation in the third processing chamber;
- d) transporting the exposed resist film in line to the second processing chamber and then post-baking the exposed resist film in the second processing chamber;
- and
- e) transporting the post-baked resist film in line to the first processing chamber and then developing the post-baked resist film in the first processing chamber, thereby defining a resist pattern on the substrate.
3 more elements
A pattern forming method comprising the steps of:
- a) forming a resist film out of a chemically amplified resist material on a substrate;
- b) pre-baking the resist film;
- c) exposing the pre-baked resist film to extreme ultraviolet radiation;
- d) post-baking the exposed resist film;
- e) forming a silylated layer selectively on the surface of the post-baked resist film;
- and
- f) dry-developing the resist film, on which the silylated layer has been formed, using the silylated layer as a hard mask, thereby defining a resist pattern on the substrate,
- wherein the steps b), c), d), e) and f) are carried out in a vacuum.
5 more elements
A pattern forming method comprising the steps of:
- a) forming a resist film on a substrate in a first processing chamber containing air or an inert gas;
- b) pre-baking the resist film in a vacuum in a second processing chamber;
- c) transporting the pre-baked resist film in line to a vacuum in a third processing chamber and then exposing the pre-baked resist film to extreme ultraviolet radiation in the third processing chamber;
- d) transporting the exposed resist film in line to the second processing chamber and then post-baking the exposed resist film in the second processing chamber;
- e) transporting the post-baked resist film in line to a vacuum in a fourth processing chamber and then forming a silylated layer selectively on the surface of the post-baked resist film in the fourth processing chamber;
- and
- f) transporting the resist film, on which the silylated layer has been formed, in line to a vacuum in a fifth processing chamber and then dry-developing the resist film, having the silylated layer thereon, using the silylated layer as a hard mask in the fifth processing chamber, thereby defining a resist pattern on the substrate.
4 more elements
Dependencies are inferred from the claim text.