Transfer mask, method of dividing pattern or transfer mask, and method of manufacturing transfer mask

A transfer mask to transfer a transfer pattern to a substrate by use of energy beams, having shielding patterns made from thin film by forming aperture patterns in a thin film portion supported by a supporting frame, said transfer mask comprising:

• a shielding pattern split for forming a complementary pattern, wherein the pattern before forming said split pattern is a plural pattern with two ends connected and supported by a supporting portion adjacent to each other and the length of the shielding patterns are equal or larger than an allowable length y represented by Equation 2 so that the split shielding patterns have the length smaller than the allowable length y and the density smaller than the pattern before split.
• Allowable pattern length (y)=412.5X−95.33 (Equation 2)
• X:
• pattern width.

A manufacturing method of a transfer mask to transfer a transfer pattern to a substrate by use of energy beams, having shielding patterns made from thin film by forming aperture patterns in a thin film portion supported by a supporting frame, said method comprising steps of:

• determining whether it is necessary to split the shielding pattern for forming a complementary pattern on pattern data and forming a split pattern data if necessary;
• performing a pattern proximity-effect correction to said pattern data;
• converting the data into the transferring data and transferring said data to a photosensitive material on the substrate;
• and
• forming the aperture pattern in the thin film portion by a dry etching method,
• wherein said determining step, in the case when the transfer mask has a shielding pattern which is one end connected and supported by a supporting portion, determines whether it is necessary to split the shielding pattern for forming a complementary pattern in accordance with the surface area and the supporting portion cross sectional area of the shielding pattern.

A manufacturing method of a transfer mask to transfer a transfer pattern to a substrate by use of energy beams, having shielding patterns made from thin film by forming aperture patterns in a thin film portion supported by a supporting frame, said method comprising steps of:

• performing a pattern proximity-effect correction on pattern data;
• determining whether it is necessary to split the shielding pattern for forming a complementary pattern and forming a split pattern data if necessary on said pattern data;
• converting the data into the transferring data and transferring said data to a photosensitive material on the substrate;
• and
• forming the aperture pattern in the thin film portion by a dry etching method,
• wherein said determining step, in the case when the transfer mask has a shielding pattern which is one end connected and supported by a supporting portion, determines whether it is necessary to split the shielding pattern for forming a complementary pattern in accordance with the surface area and the supporting portion cross sectional area of the shielding pattern.

A manufacturing method of a transfer mask to transfer a transfer pattern to a substrate by use of energy beams, having shielding patterns made from thin film by forming aperture patterns in a thin film portion supported by a supporting frame, said method comprising steps of:

• determining whether it is necessary to split the shielding pattern for forming a complementary pattern on pattern data and forming a split pattern data if necessary;
• performing a pattern proximity-effect correction to said pattern data;
• converting the data into the transferring data and transferring said data to a photosensitive material on the substrate;
• and
• forming the aperture pattern in the thin film portion by a dry etching method,
• wherein said determining step, in the case when the transfer mask has a shielding pattern which is a plural patterns with two ends connected and supported by a supporting portion adjacent to each other, determines whether it is necessary to split the shielding pattern for forming a complementary pattern in accordance with the length and width of the shielding pattern.

A manufacturing method of a transfer mask to transfer a transfer pattern to a substrate by use of energy beams, having shielding patterns made from thin film by forming aperture patterns in a thin film portion supported by a supporting frame, said method comprising steps of:

• performing a pattern proximity-effect correction on pattern data;
• determining whether it is necessary to split the shielding pattern for forming a complementary pattern and forming a split pattern data if necessary on said pattern data;
• performing a pattern proximity-effect correction to said pattern data;
• converting the data into the transferring data and transferring said data to a photosensitive material on the substrate;
• and
• forming the aperture pattern in the thin film portion by a dry etching method,
• wherein said determining step, in the case when the transfer mask has a shielding pattern which is a plural patterns with two ends connected and supported by a supporting portion adjacent to each other, determines whether it is necessary to split the shielding pattern for forming a complementary pattern in accordance with the length and width of the shielding pattern.