Photoresist composition for imaging thick films
AssigneeClariant International Ltd.
InventorsRalph R. Dammel, Stephen Meyer, Mark A. Spak
Life of this patent
Estimating the term…
Abstract
The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.
Claims20
A coated substrate especially useful for imaging thick films, comprising a substrate with a photoresist coating film, wherein the photoresist coating film is formed from a photoresist composition comprising an alkali soluble resin, a photoactive compound, a surfactant and a solvent, where the surfactant is at a level ranging from 2000 ppm to 14,000 ppm relative to total weight of the photoresist, further wherein the thickness of the photoresist coating film is greater than 20 microns.
A process for imaging a photoresist coating comprising the steps of:
- a) forming on a substrate a photoresist coating, wherein the photoresist coating is formed from a photoresist composition comprising an alkali soluble resin, a photoactive compound, a surfactant and a solvent, where the surfactant is at a level ranging from 2000 ppm to 14,000 ppm relative to total weight of the photoresist, further where the thickness of the photoresist layer is greater than 20 microns
- b) image-wise exposing the photoresist coating;
- c) optionally, postexposure baking the photoresist coating;
- and
- d) developing the photoresist coating with an aqueous alkaline solution.
A photoresist composition especially useful for imaging thick films, comprising an alkali soluble resin, a photoactive compound, a surfactant, a crosslinking agent and a solvent, where the surfactant is at a level ranging from 2000 ppm to 14,000 ppm relative to total weight of the photoresist.
Dependencies are inferred from the claim text.