Power amplifier having high heat dissipation
AssigneeMediatek Incorporation
InventorsJin Wook Cho, Hongxi Xue
Life of this patent
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Abstract
A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.
Claims22
A method for manufacturing a heat dissipating power amplifier integrated circuit, the method comprising:
- providing a substrate;
- providing a heat sink for dissipating heat;
- integrally forming a transistor on the substrate, the transistor comprising a collector, a base, and at least an emitter including an enlarged portion located laterally away from the collector and the base;
- and
- directly connecting the heat sink and the emitter using an emitter electrode.
A power amplifier integrated circuit comprising:
- a substrate;
- a transistor disposed on the substrate, the transistor including a collector, a base, and an emitter, the emitter including an enlarged portion located laterally away from the collector and the base;
- a heat sink for dissipating heat;
- and
- a flip-chip bump connecting the heat sink and the enlarged portion of the emitter.
A power amplifier integrated circuit comprising:
- a substrate;
- a transistor disposed on the substrate, the transistor including a collector, a base, and an emitter, the emitter including an enlarged portion located laterally away from the collector and the base;
- a heat sink for dissipating heat;
- and
- a via connecting the heat sink and the enlarged portion of the emitter, the via penetrating the substrate at the location of the enlarged portion of the emitter.
A power amplifier integrated circuit comprising:
- a planar substrate;
- a transistor integrally formed on the substrate, the transistor including a collector, a base, and an emitter, the emitter including an enlarged portion;
- a heat sink for dissipating heat;
- and
- an emitter electrode directly electrically and thermally connecting the heat sink and the enlarged portion of the emitter;
- wherein in the plane of the substrate, the area of the enlarged portion of the emitter is greater than the area of the emitter electrode, and the enlarged portion of the emitter has a center of area located laterally away from the collector and the base by at least half a major dimension of the emitter electrode.
Dependencies are inferred from the claim text.