Back to results
US 6,812,473 B1Granted
Electron beam drawing mask blank, electron beam drawing mask, and method of manufacturing the same
AssigneeHoya Corporation
InventorIsao Amemiya
Life of this patent
Estimating the term…
Abstract
An electron beam drawing mask includes a pattern supporting film for transmitting an electron beam therethrough; an electron beam scattering body pattern formed over the pattern supporting film; and a support member for supporting the pattern supporting film and the electron beam scattering body pattern. The pattern supporting film has a film thickness of 0.005 to 0.2 micron, a film material density of 1.0 to 5.0 g/cm3 and an elastic modulus of 0.8×1011 Pa or higher. The electron beam scattering body pattern has a film thickness of 0.2 to 2 micron, a film material density of 1.0 to 5.0 g/cm3, and an elastic modulus of 0.8×1011 Pa or higher.
Claims81
An electron beam drawing mask blank comprising:
- a pattern supporting layer for transmitting an electron beam therethrough;
- an electron beam scatter layer formed over said pattern supporting layer;
- and a support member for supporting said pattern supporting layer and said electron beam scattering layer, wherein said electron beam scattering layer is made of a material composed substantially of the carbon element and/or the silicon element.
An electron beam drawing mask blank comprising:
- a pattern supporting layer for transmitting an electron beam therethrough;
- an etching stopper layer formed over said pattern supporting layer;
- an electron beam scattering layer formed over said etching stopper layer;
- and a support member for supporting said pattern supporting layer, said etching stopper layer and said electron beam scattering layer, wherein said electron beam scattering layer is made of either a diamond like carbon or a material containing a diamond like carbon doped with at least one of B, N, Si and P;
- said pattern supporting layer is made of either a diamond like carbon or a material containing a diamond like carbon doped with at last one of B, N, P, Ti, Si and Al;
- and said etching stopper layer is made of a material having a high etching selection ratio with said electron beam scattering layer.
3 more elements
An electron beam drawing mask blank comprising:
- a pattern supporting layer for transmitting an electron beam therethrough;
- an electron beam scattering layer formed over said pattern supporting layer;
- and a support member for supporting said pattern supporting layer and said electron beam scattering layer, wherein said pattern supporting layer has a film thickness of 0.005 to 0.2 micron whereas said electron beam scattering layer has a film thickness of 0.2 to 2 micron so that they are made of materials satisfying these film thickness relations.
An electron beam drawing mask comprising:
- a pattern supporting film for transmitting an electron beam therethrough;
- an electron beam scattering body pattern formed over said pattern supporting film;
- and a support member for supporting said pattern supporting film and said electron beam scattering body pattern, wherein said pattern supporting film has a film thickness of 0.005 to 0.2 micron, a film material density of 1.0 to 5.0 g/cm3 and an elastic modulus of 0.9×1011 Pa or higher;
- and said electron beam scattering body pattern has a film thickness of 0.2 to 2 micron, a film material density of 1.0 to 5.0 g/cm3, and an elastic modulus of 0.8×1011 Pa or higher.
1 more element
An electron beam drawing mask comprising:
- a pattern supporting film for transmitting an electron beam therethrough;
- an electron beam scattering body pattern formed over said pattern supporting film;
- and a support member for supporting said pattern supporting film and said electron beam scattering body pattern, wherein at least one of said support member, said pattern supporting film and said election beam scattering body pattern is made of a material composed substantially of carbon element.
An electron beam drawing mask comprising:
- a pattern supporting film for transmitting an electron beam therethrough;
- an electron beam scattering body pattern formed over said pattern supporting film;
- an etching stopper layer formed all over said pattern supporting film or left under said electron beam scattering body pattern;
- and a support member for supporting said pattern supporting film, said etching stopper layer and said electron beam scattering body pattern, wherein said electron beam scattering body pattern is made of either a diamond like carbon or a material containing a diamond like carbon doped with at least one of B, N, Si and P;
- said pattern supporting film is made of either a diamond like carbon or a material containing a diamond like carbon doped with at least one of B, N, P, Ti, Si and Al;
- and said etching stopper layer is made of a material having a high etching selection ratio with said electron beam scattering layer.
3 more elements
An electron beam drawing mask comprising:
- a pattern supporting film for transmitting an electron beam therethrough;
- an electron beam scattering body pattern formed over said pattern supporting film;
- and a support member for supporting said pattern supporting film and said electron beam body pattern, wherein:
- said electron beam scattering body pattern is made of a material composed substantially of the silicon element;
- and said pattern supporting film is made of SiC or TiC.
2 more elements
An electron beam drawing mask comprising:
- a pattern supporting film for transmitting an electron beam therethrough;
- an etching stopper layer formed over said pattern supporting film;
- an electron beam scattering body pattern formed over said etching stopper layer;
- and a support member for supporting said pattern supporting film, said etching stopper layer and said electron beam scattering body pattern, wherein said electron beam scattering body pattern is made of hard carbon;
- said etching stopper layer is made of SO2;
- and said pattern supporting film is made of a material composed substantially of the silicon element.
3 more elements
An electron beam drawing mask comprising:
- a pattern supporting film for transmitting an electron beam therethrough;
- an electron beam scattering body pattern formed over said pattern supporting film;
- and a support member for supporting said pattern supporting film and said electron beam scattering body pattern, wherein said electron beam scattering body pattern is made of either a diamond like carbon or a material containing a diamond like carbon doped with at least one of B, N, Si and P;
- said pattern supporting film is made of R—SiC.
1 more element
An electron beam drawing mask comprising:
- a pattern supporting film for transmitting an electron beam therethrough;
- an electron beam scattering body pattern formed over said pattern supporting;
- and a support member for supporting said pattern supporting film and said electron beam scattering body pattern, wherein said electron beam scattering body pattern is made of a material composed substantially of the silicon element;
- and said pattern supporting film is made of SiC.
1 more element
An electron beam drawing mask comprising:
- a pattern supporting film for transmitting an electron beam therethrough;
- an electron beam scattering body pattern formed over said pattern supporting film;
- and a support member for supporting said pattern supporting film and said electron beam scattering body pattern, wherein said electron beam scattering body pattern is made of a material composed substantially of the silicon element;
- and said pattern supporting film is made of either a diamond like carbon or a material containing a diamond like carbon doped with at least one of B, N, P, Ti, Si and Al.
1 more element
Dependencies are inferred from the claim text.