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US 6,806,541 B2Granted
Field effect transistor with improved isolation structures
AssigneeTexas Instruments Incorporated
InventorsLily X. Springer, Binghua Hu, Chin-Yu Tsai, Jozef C. Mitros
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Abstract
An electronic device architecture is described comprising a field effect device in an active region 22 of a substrate 10. Channel stop implant regions 28a and 28b are used as isolation structures and are spaced apart from the active region 22 by extension zones 27a and 27b. The spacing is established by using an inner mask layer 20 and an outer mask layer 26 to define the isolation structures.
Claims4
An electronic system formed in a semiconductor layer, comprising:
- a field effect transistor disposed in an active region of the outer surface of the semiconductor layer, the transistor comprising implanted regions proximate the periphery of the active region;
- a field oxide layer on the outer surface of the semiconductor layer abutting the periphery of at least a portion of the active region;
- and
- a channel stop implant region disposed in the semiconductor layer inwardly from portions of the field oxide layer and spaced apart from the periphery of the active region by an extension zone, the extension zone operable to inhibit the electrical interaction of the peripheral implanted regions of the transistor and the channel stop implant region.
1 more element
Dependencies are inferred from the claim text.