Non-volatile memory and fabricating method thereof
AssigneeMacronix International Co., Ltd.
InventorChing-Yu Chang
Life of this patent
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Abstract
A method of fabricating a non-volatile memory is provided. A longitudinal strip of stacked layer is formed over a substrate. The longitudinal strip is a stacked layer including a gate dielectric layer, a conductive layer and a cap layer. A buried bit line is formed in the substrate on each side of the longitudinal strip. The longitudinal strip is patterned to form a plurality of stacked blocks. Thereafter, a dielectric layer is formed over the substrate. The dielectric layer exposes the cap layer of the stacked blocks. Some cap layers of the stacked blocks are removed to expose the conductive layer underneath. A word line is formed over the dielectric layer to connect stacked blocks in the same row serially together.
Claims5
A non-volatile memory structure, comprising:
- a substrate;
- a buried bit line within the substrate;
- a plurality of first stacked blocks on the substrate, wherein each first stacked block is a stack having a cap layer, a conductive layer and a gate dielectric layer;
- a plurality of second stacked blocks on the substrate, wherein each second stacked block is a stack having a conductive layer and a gate dielectric layer;
- a dielectric layer over the substrate for isolating the first stacked blocks and the second stacked blocks;
- and
- a word line over the dielectric layer for connecting stacked blocks in the same row serially to form a plurality of coding memory cells, wherein the coding memory cells having a first stacked block is in a first data state and the coding memory cells having a second stacked block is in a second data state.
Dependencies are inferred from the claim text.