Recessed magnetic storage element and method of formation
AssigneeMicron Technology, Inc.
InventorMark E. Tuttle
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Abstract
A method of forming self-aligned recessed MRAM structures is disclosed. Recessed pinned and sense magnetic layers of an MRAM stack are formed in recessed digit lines formed in an insulating layer.
Claims30
A magnetic random access memory structure comprising:
- a plurality of first recessed conductors formed in an insulating layer;
- a plurality of recessed first and second magnetic members formed over said plurality of first recessed conductors, said plurality of first and second magnetic members overlapping and being recessed in said insulating layer;
- and
- a plurality of second conductors provided over said first and second magnetic members and arranged at an angle relative to said plurality of first recessed conductors.
A memory device comprising a plurality of self-aligned magnetic random access memory cells, said self-aligned magnetic random access memory cells comprising a plurality of recessed pinned layers formed in recesses of an insulating layer formed over a semiconductor substrate, and a plurality of recessed sense layers formed in said recesses and over said plurality of recessed pinned layers.
A processor-based system, comprising:
- a processor;
- and
- an integrated circuit coupled to said processor, said integrated circuit comprising a plurality of first conductors orthogonal to a plurality of second conductors, and a plurality of recessed second magnetic members formed over a plurality of recessed first magnetic members, said plurality of recessed second magnetic members and recessed first magnetic members being located between an area where said plurality of first conductors and said plurality of second conductors overlap.
Dependencies are inferred from the claim text.