Thin film magnetic memory device
AssigneeRenesas Technology Corp.
InventorTsukasa Ooishi
Life of this patent
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Abstract
A thin film magnetic memory device includes: TMR elements provided at a predetermined distance away from each other on a main surface of a silicon substrate so as to operate as memory elements; a first digit line for applying a magnetic field to TMR element, extending in one direction so as to intersect TMR element; a second digit line for applying a magnetic field to TMR element, extending parallel to the first digit line so as to intersect TMR element; and a magnetic film provided so as to fill in the space between the first digit line and the second digit line and so as to bring into contact with the first and second digit lines. The present invention provides a thin film magnetic memory device wherein crosstalk can be prevented from generating between adjacent memory cells and wherein wire resistance does not increase.
Claims12
A thin film magnetic memory device, comprising:
- first and second magnetic memory cells provided in a main surface of a semiconductor substrate at a predetermined distance away from each other so as to operate as memory cells;
- a first wire for applying a magnetic field to the first magnetic memory cell extending in one direction so as to intersect the first magnetic memory cell;
- a second wire for applying a magnetic field to the second magnetic memory cell extending in parallel to the first wire so as to intersect the second magnetic memory cell;
- and
- a magnetic film provided so as to fill in the space between the first wire and the second wire and so as to bring into contact with the first and second wires.
A thin film magnetic memory device comprising:
- first and second magnetic memory cells provided in a main surface of a semiconductor substrate at a predetermined distance away from each other so as to operate as memory cells;
- a first wire for applying a magnetic field to the first magnetic memory cell extending in one direction so as to intersect the first magnetic memory cell;
- a second wire for applying a magnetic field to the second magnetic memory cell extending in parallel to the first wire so as to intersect the second magnetic memory cell;
- a magnetic film that fills in the space between the first wire and the second wire;
- and
- insulator films interposed between said first wire and said magnetic film as well as between said second wire and said magnetic film, respectively.
Dependencies are inferred from the claim text.