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US 6,806,209 B2Granted
Develop processing method of a resist surface on a substrate for reduced processing time and reduced defect density
AssigneeMicron Technology, Inc.
InventorsJohn T. Davlin, Greg Montanino
Life of this patent
Estimating the term…
Abstract
A develop process for reduced cycle time and reduced defects in the develop process for semiconductor/IC fabrication is shown. The use of a linear slit scan nozzle provides even distribution of a layer of develop material within an acceptable thickness and uniformity range such that a pre-wet step is not needed to spread the develop material evenly over the surface of a wafer. The use of a whip operation prior to rinsing with DI water significantly reduces develop defects.
Claims42
A method of making a negative resist feature on a semiconductor surface, comprising:
- coating the semiconductor surface with resist material;
- exposing selected first areas of the resist material on the semiconductor surface to a radiation source, leaving second areas of the resist material unexposed;
- coating the resist material with develop material;
- reacting the resist material with the develop material in the first areas of the resist material;
- spinning the semiconductor surface for a first period of time after coating the resist surface and reacting the resist surface;
- and
- after the first period of time, continuing to spin the semiconductor surface for a second period of time while simultaneously rinsing the semiconductor surface with a solvent to remove the develop material and the second areas of the resist material, leaving the first areas of resist material behind on the semiconductor surface.
4 more elements
A method of making a negative resist feature on a semiconductor surface, comprising:
- coating the semiconductor surface with resist material;
- exposing selected first areas of the resist material on the semiconductor surface to a radiation source, leaving second areas of the resist material unexposed;
- coating the resist material with develop material, without pre-wetting the resist material surface;
- reacting the resist material with the develop material in the first areas of the resist material;
- spinning the semiconductor surface for a first period of time after coating the resist surface and reacting the resist surface;
- and
- after the first period of time, continuing to spin the semiconductor surface for a second period of time while simultaneously rinsing the semiconductor surface with a solvent to remove the develop material and the second areas of the resist material, leaving the first areas of resist material behind on the semiconductor surface.
4 more elements
A method of doping a selected region of a semiconductor wafer, comprising:
- coating a surface of the semiconductor wafer with resist material;
- exposing first areas of the resist material on the semiconductor surface to a radiation source, leaving second areas of the resist material unexposed;
- coating the resist material with develop material;
- reacting the resist material with the develop material in the first areas of the resist material;
- spinning the semiconductor wafer for a first period of time after coating the resist surface and reacting the resist surface;
- after the first period of time, continuing to spin the semiconductor wafer for a second period of time while simultaneously rinsing the surface with a solvent to remove the develop material and selected areas of the resist material;
- and
- introducing a dopant species to the semiconductor wafer in areas of the semiconductor wafer that are exposed by the selected areas of resist that are removed.
5 more elements
A method of doping a selected region of a semiconductor wafer, comprising:
- coating a surface of the semiconductor wafer with resist material;
- exposing first areas of the resist material on the semiconductor surface to a radiation source, leaving second areas of the resist material unexposed;
- coating the resist material with develop material, without pre-wetting the resist material surface;
- reacting the resist material with the develop material in the first areas of the resist material;
- spinning the semiconductor wafer for a first period of time after coating the resist surface and reacting the resist surface;
- after the first period of time, continuing to spin the semiconductor wafer for a second period of time while simultaneously rinsing the surface with a solvent to remove the develop material and selected areas of the resist material;
- and
- introducing a dopant species to the semiconductor wafer in areas of the semiconductor wafer that are exposed by the selected areas of resist that are removed.
5 more elements
A method of etching a selected region of a semiconductor wafer, comprising:
- coating a surface of the semiconductor wafer with resist material;
- exposing first areas of the resist material on the semiconductor surface to a radiation source, leaving second areas of the resist material unexposed;
- coating the resist material with develop material;
- reacting the resist material with the develop material in the first areas of the resist material;
- spinning the semiconductor wafer for a first period of time after coating the resist surface and reacting the resist surface;
- after the first period of time, continuing to spin the semiconductor wafer for a second period of time while simultaneously rinsing the surface with a solvent to remove the develop material and selected areas of the resist material;
- and
- etching the semiconductor wafer in areas of the semiconductor wafer that are exposed by the selected areas of resist that are removed.
5 more elements
A method of etching a selected region of a semiconductor wafer, comprising:
- coating a surface of the semiconductor wafer with resist material;
- exposing first areas of the resist material on the semiconductor surface to a radiation source, leaving second areas of the resist material unexposed;
- coating the resist material with develop material, without pre-wetting the resist material surface;
- reacting the resist material with the develop material in the first areas of the resist material;
- spinning the semiconductor wafer for a first period of time after coating the resist surface and reacting the resist surface;
- after the first period of time, continuing to spin the semiconductor wafer for a second period of time while simultaneously rinsing the surface with a solvent to remove the develop material and selected areas of the resist material;
- and
- etching the semiconductor wafer in areas of the semiconductor wafer that are exposed by the selected areas of resist that are removed.
5 more elements
Dependencies are inferred from the claim text.