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US 6,806,202 B2Granted
Method of removing silicon oxide from a surface of a substrate
AssigneeMotorola, Inc.
InventorsXiaoming Hu, James B. Craigo, Ravindranath Droopad, John L. Edwards, Jr., Yong Liang, Yi Wei, Zhiyi Yu
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Abstract
A method for removing silicon oxide from a surface of a substrate is disclosed. The method includes depositing material onto the silicon oxide (110) and heating the substrate surface to a sufficient temperature to form volatile compounds including the silicon oxide and the deposited material (120). The method also includes heating the surface to a sufficient temperature to remove any remaining deposited material (130).
Claims3
A method of removing silicon oxide from a substrate surface, the method comprising:
- providing a substrate having a surface comprising silicon oxide;
- depositing about 1 monolayer to about 10 monolayers of a material comprising an element selected from the group consisting of lithium, calcium, and magnesium;
- heating the substrate surface to a first temperature less than about 600° C. to form a volatile compound comprising oxides and the material;
- and
- heating the substrate surface to a second temperature less than about 900° C. to remove any remaining material from the substrate surface,
- wherein the step of depositing and the step of heating the substrate to a first temperature are repeated until substantially all the silicon oxide is removed from the substrate surface.
3 more elements
Dependencies are inferred from the claim text.