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US 6,806,183 B2Granted
Methods for forming capacitors on semiconductor substrates
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-seok Kang, Doo-sup Hwang, Cha-young Yoo, Young-wook Park, Hong-bae Park
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Abstract
Methods and apparatus for plasma annealing layers of a microelectronic capacitor on a substrate are provided to improve the leakage current characteristics of a capacitor and/or to reduce the number of impurities in an electrode.
Claims21
A method for forming a capacitor on a substrate, comprising the steps of:
- forming a lower electrode on a substrate;
- forming a dielectric layer on the lower electrode;
- plasma annealing the dielectric layer, wherein the steps of forming a dielectric layer and plasma annealing the dielectric layer are performed in the same chamber;
- and
- forming an upper electrode on the plasma annealed dielectric layer.
2 more elements
A method for forming a capacitor on a substrate, comprising the steps of:
- forming a lower electrode on a substrate;
- forming a dielectric layer on the lower electrode;
- plasma annealing the dielectric layer;
- and
- forming an upper electrode on the plasma annealed dielectric layer, wherein the steps of forming and plasma annealing the dielectric layer are performed repeatedly.
2 more elements
A method for forming a capacitor on a substrate, comprising the steps of:
- forming a lower electrode on a substrate;
- forming a dielectric layer on the lower electrode;
- forming a first upper electrode on the dielectric layer;
- and
- oxygen radical annealing the first upper electrode, wherein the steps of forming the first upper electrode and oxygen radical annealing the first upper electrode are performed in the same chamber.
2 more elements
Dependencies are inferred from the claim text.