Back to results
US 6,806,175 B2Granted
Method for forming protective films and spacers
AssigneeMicron Technology, Inc.
InventorJohn T. Moore
Life of this patent
Estimating the term…
Abstract
A method for protecting a gate stack in an integrated circuit wafer involves the deposition of a thin nucleation or seed layer of silicon nitride on the gate stack. Following deposition of the nucleation layer, a second, primary layer of silicon nitride is formed on the nucleation layer using a BTBAS precursor to thereby form a spacer film. The primary layer may have carbon incorporated therein.
Claims34
A method for protecting a gate stack in a semiconductor device, comprising the steps of:
- 1) depositing a nucleation layer of silicon nitride on said gate stack;
- and
- 2) depositing a primary layer of silicon nitride over said nucleation layer, said primary layer being deposited using bistertbutylaminosilane and at least one nitrogen-containing compound.
A method for protecting a gate stack in a semiconductor device, comprising the steps of:
- 1) depositing a nucleation layer of silicon nitride on said gate stack using dichlorosilane and at least one nitrogen-containing compound, wherein said nucleation layer deposition is performed at an operating temperature within the range of about 450 to about 800° C. and an operating pressure within the range of about 0.5 to about 5 Torr, and further wherein the flow rate of said dichlorosilane and said nitrogen-containing compound during said deposition is within the range of about 50 to about 500 SCCM/minute;
- and
- 2) depositing a primary layer of silicon nitride over said nucleation layer, said primary layer being deposited using bistertbutylaminosilane and at least one nitrogen-containing compound, wherein said primary layer deposition is performed at an operating temperature within the range of about 450 to about 800° C. and an operating pressure within the range of about 50 to about 2000 milliTorr, and further wherein the flow rate for said BTBAS is within the range of about 25 to about 500 SCCM/minute and the flow rate for said nitrogen-containing compound is within the range of about 25 to about 1000 SCCM/minute during said deposition.
Dependencies are inferred from the claim text.