Method for producing highly doped semiconductor components

A method for producing a semiconductor component in which at least one doped region is introduced into a semiconductor wafer, comprising:

• applying a solid glass layer provided with a dopant on both sides of the semiconductor wafer;
• heating the semiconductor wafer to a high temperature of at least 1200 degrees centigrade while the glass layer is applied so that the dopant from the solid glass layer penetrates into the semiconductor wafer to produce the at least one doped region;
• applying a neutral glass layers on the solid glass layer prior to heating the semiconductor wafer;
• removing the neutral glass layers together with the solid glass layers after heating the semiconductor wafer;
• and
• providing the dopant at a dosage of at least 1017/cm2 in the at least one doped region;
• wherein the solid glass layer is applied using chemical vapor deposition at atmospheric pressure;
• and
• wherein the dopant constituent of the solid glass layer on a front side of the semiconductor wafer is different from the dopant constituent of the solid glass layer on a back side of the semiconductor wafer.

A method for producing a semiconductor component in which at least one doped region is introduced into a semiconductor wafer, comprising:

• applying a solid glass layer provided with a dopant on both sides of the semiconductor wafer;
• heating the semiconductor wafer to a high temperature of at least 1200 degrees centigrade while the glass layer is applied so that the dopant from the solid glass layer penetrates into the semiconductor wafer to produce the at least one doped region;
• applying a neutral glass layer on the solid glass layers prior to heating the semiconductor wafer;
• removing the neutral glass layers together with the solid glass layers after heating the semiconductor wafer;
• and
• providing the dopant at a dosage of at least 1017/cm2 in the at least one doped region;
• wherein the dopant constituent of the solid glass layer on a front side of the semiconductor wafer is different from the dopant constituent of the solid glass layer on a back side of the semiconductor wafer and the solid glass layer is applied using a chemical vapor deposition at atmospheric pressure using a tetra-ethyl-ortho-silicate gas.