Physical vapor deposition of nickel
AssigneeAdvanced Micro Devices, Inc.
InventorsChristy Mei-Chu Woo, Eric N. Paton, Susan Tover
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Abstract
Nickel film formation is implemented by heating a deposition chamber during deposition of nickel on a substrate or between processing of two or more substrates or both. Embodiments include forming a nickel silicide on a composite having an exposed silicon surface by introducing the substrate to a PVD chamber having at least one heating element for heating the chamber and depositing a layer of nickel directly on the exposed silicon surface of the composite while concurrently heating the chamber with the heating element.
Claims10
A method of forming nickel layers in a deposition chamber on a plurality of substrates, the deposition chamber having at least one heating element the method comprising:
- heating the deposition chamber with the at least one heating element prior to introduction of a first substrate;
- introducing the first substrate to the deposition chamber while heating the deposition chamber with the at least one heating element;
- depositing a layer of nickel on the first substrate while heating the deposition chamber with the at least one heating element;
- removing the first substrate from the deposition chamber while heating the deposition chamber with the at least one heating element;
- introducing a second substrate to the deposition chamber while heating the deposition chamber with the at least one heating element;
- and
- depositing a layer of nickel on the second substrate while heating the deposition chamber with the at least one heating element, wherein
- the chamber is heated with the at least one heating element continuously between the removal of the first substrate and the introduction of the second substrate.
Dependencies are inferred from the claim text.