Method for manufacturing a semiconductor device with sinker contact region

A method for manufacturing a semiconductor device on a substrate, comprising:

• forming a buried layer of a semiconductor material on the substrate;
• forming an active region of a semiconductor material adjacent at least a portion of the buried layer, the active region having a top surface;
• forming a base layer adjacent at least a portion of the active region top surface;
• forming a stacked gate layer of conductive material over the top surface separated by a first dielectric material;
• forming a second dielectric layer adjacent at least a portion of the base layer and the stacked gate layer;
• removing at least part of the dielectric layer from an emitter contact location and concurrently from a sinker contact location at the top surface;
• forming an emitter structure at the emitter contact location including etching a portion of the second dielectric layer adjacent the emitter structure and currently etching the sinker contact location to form a first sinker contact region in the form of a depression of a first depth at the top surface;
• and
• forming an stacked gate structure including etching a portion of the stacked gate layer and currently etching the sinker contact location to form a second sinker contact region in the form of a depression of a second depth at the top surface.