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US 6,806,154 B1Granted
Method for forming a salicided MOSFET structure with tunable oxynitride spacer
AssigneeIntegrated Device Technology, Inc.
InventorGuo-Qiang Patrick Lo
Life of this patent
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Abstract
A method for fabricating a MOSFET structure is disclosed. A coating is provided on the upper surface of a gate. Thereafter doped regions are implanted into the substrate. A layer is provided over the MOSFET structure and etched to form spacers. The MOSFET structure is reacted with salicide-forming reactant to produce a salicide MOSFET.
Claims21
A method of fabricating a salicided MOSFET structure comprising:
- forming an anti-reflective coating on a gale layer, said anti-reflective coating including oxynitride;
- patterning said gate layer and said anti-reflective coating so as to define a gate having a top surface, and so as to define a remaining portion of said anti-reffective coating, said remaining portion of said anti-reflective coating overlying said top surface of said gate;
- depositing a first layer such that said first layer overlies said remaining portion of said anti-reflective coating, said-first layer including oxynitride;
- and
- performing a single etch step to remove portions of said first layer so as to form a first spacer and a second spacer, said single etch step also removing all of said remaining portion of said anti-reflective coating.
2 more elements
A method for fabricating a MOSFET structure comprising:
- providing an oxynitride coating on an upper surface of a gate above a substrate;
- forming implanted regions of dopant in said substrate;
- dispositing a first layer above said gate, said first layer comprising oxynitride;
- performing a single etch step so as to remove all of said oxynitride coating on said gate and so as to modify said first layer to form spacers adjacent said gate;
- depositing a salicide-forming reactant above said gate;
- and
- forming a salicide MOSFET by reacting said gate with said salicide-forming reactant.
4 more elements
A method of fabricating a MOSFET structure comprising:
- forming a coating on a gate layer, said coating including a first material that comprises oxynitride;
- patterning said gate layer and said coating to define a gate having a top surface, a portion of said coating remaining on said top surface of said gate;
- depositing a first layer on said gate, said first layer containing said oxynitride;
- and
- performing a single etch step to remove all of said remaining portion of said coating during a time in which said first layer is modified to form a first spacer and a second spacer adjacent said gate.
2 more elements
A method of fabricating a MOSFET structure comprising:
- forming an oxynitride anti-reflective coating on a gate layer;
- patterning said gate layer and said oxynitride anti-reflective coating to define a gate having a top surfaced, wherein a portion of said oxynitride anti-reflective coating remains on said top surface of said gate;
- depositing a layer of oxynitride over said portion of said oxynitride anti-reflective coating remains on said top surface of said gate;
- and
- performing a single etch step to remove all of said portion of said oxynitride anti-reflective coating remaining on said top surface of said gate during a time in which said layer of oxynitride is modified to form a first spacer and a second spacer adjacent said gate.
2 more elements
Dependencies are inferred from the claim text.