Sidewall processes using alkylsilane precursors for MOS transistor fabrication
AssigneeTexas Instruments Incorporated
InventorsHaowen Bu, Malcolm J. Bevan
Life of this patent
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Abstract
A method for using alkylsilane precursors during the sidewall formation process in MOS transistor fabrication processes. Alkylsilane precursors are used to form carbon contain silicon oxide layers (110) and carbon containing silicon nitride layers (120) during the sidewall formation process. The carbon containing layers (110) (120) introduce carbon into the extension regions (100) and the gate region (30) during thermal annealing.
Claims10
A method for fabricating a MOS transistor, comprising:
- providing a semiconductor substrate;
- forming a gate stack on said semiconductor substrate;
- forming extension regions in said semiconductor substrate adjacent to said gate stack;
- forming a carbon containing silicon oxide layer over said gate stack and said extension regions;
- forming sidewall structures adjacent to said carbon containing silicon oxide layer on opposite sides of said gate stack;
- forming source and drain regions in said semiconductor substrate adjacent to said sidewall structures;
- and
- annealing said extension and source and drain regions.
A method for fabricating an integrated circuit transistor, comprising:
- providing a semiconductor substrate;
- forming a gate stack on said semiconductor substrate;
- forming a first silicon oxide layer on said gate stack;
- forming extension regions in said semiconductor substrate adjacent to said gate stack;
- forming a carbon containing silicon oxide layer on said gate stack and said extension regions;
- forming a carbon containing silicon nitride layer on said carbon containing silicon oxide layer;
- forming a silicon oxide layer on said carbon containing silicon nitride layer;
- etching said silicon oxide layer and said carbon containing silicon nitride layer to form sidewall structures adjacent to said carbon containing silicon oxide layer and on opposite sides of said gate stack;
- forming source and drain regions in said semiconductor substrate adjacent to said sidewall structures;
- and
- annealing said extension regions and said source and drain regions.
A method for fabricating a MOS transistor, comprising:
- providing a semiconductor substrate;
- forming a gate stack on said semiconductor substrate;
- forming extension regions in said semiconductor substrate adjacent to said gate stack;
- forming a silicon oxide layer over said gate stack and said extension regions;
- forming a carbon containing silicon nitride layer over said silicon oxide layer;
- etching said silicon nitride layer to form sidewall structures;
- forming source and drain regions in said semiconductor substrate adjacent to said sidewall structures;
- and
- annealing said extension and source and drain regions.
Dependencies are inferred from the claim text.