Method of fabricating semiconductor integrated circuit device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorHiroyuki Yamauchi
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor integrated circuit device of the present invention forms an insulating film on a semiconductor wafer and forms a mask pattern containing a functional element or a wire on the formed insulating film. Dimensions of the mask pattern are changed in accordance with an amount of process variation occurring in the thickness or dielectric constant of the insulating film during the formation of the insulating film.
Claims11
A method for fabrication a semiconductor integrated circuit device, the method comprising:
- a first step of forming an insulating film on a semiconductor wafer;
- and
- a second step of forming a mask pattern containing a functional element or a wire on the insulating film and patterning the insulating film by using the formed mask pattern,
- the second step including changing dimensions of the mask pattern in accordance with an amount of process variation caused in a thickness or dielectric constant of the insulating film by at least the first step.
A method for fabricating a semiconductor integrated circuit device, the method comprising:
- a first step of preparing a plurality of lots each containing a specified number of semiconductor wafers;
- a second step of forming insulating films on the respective semiconductor wafers;
- and
- a third step of forming a mask pattern containing a functional element or a wire on each of the insulating films on the semiconductor wafers and individually patterning each of the insulating films by using the formed mask pattern,
- the third step including changing dimensions of the mask pattern on a per lot basis in accordance with an amount of process variation caused in a thickness or dielectric constant of the insulating film by the second step.
A method for fabricating a semiconductor integrated circuit device, the method comprising:
- a first step of forming insulating films on respective surfaces of a base having a polyhedral configuration;
- and
- a second step of forming a mask pattern containing a functional element or a wire on each of the insulating films and patterning the insulating film by using the formed mask pattern,
- the second step including individually measuring a thickness or dielectric constant of each of the insulating films on the surfaces of the base and changing dimensions of the mask pattern on each of the surfaces.
Dependencies are inferred from the claim text.