Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers
OwnerPadmapani C. Nallan, Guangxiang Jin +1inventors
InventorsPadmapani C. Nallan, Guangxiang Jin, Ajay Kumar
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Abstract
A method of etching high dielectric constant materials using halogen gas and reducing gas chemistry. An embodiment of the method is accomplished using a 20 to 300 sccm of chlorine and 2 to 200 sccm of carbon monoxide, regulated to a total chamber pressure of 2-100 mTorr to etch a hafnium oxide layer.
Claims17
A method of plasma etching a layer of a dielectric material having a dielectric constant that is greater than 4, comprising:
- exposing the layer to a plasma comprising carbon monoxide and a halogen containing gas, wherein the dielectric material is at least one of HfO2, ZrO2, Al2O3, ZrSiO2, HfSiO2, and TaO2.
A method of plasma etching a layer of a dielectric material comprising:
- exposing a layer of HfO2 to a plasma comprising carbon monoxide and a halogen containing gas.
A method for plasma etching a workpiece having a layer of hafnium-oxide comprising the steps of:
- supplying between 20 to 300 sccm of chlorine and between 2 to 200 sccm of carbon monoxide;
- maintaining a gas pressure of between 2-100 mTorr;
- applying a bias power to a cathode electrode of between 5 to 100 W;
- applying power to an inductively coupled antenna of between 200 to 2500 W to produce a plasma containing said chlorine gas and said carbon monoxide gas;
- maintaining said workpiece at a temperature between 100 and 500 degrees Celsius.
Dependencies are inferred from the claim text.