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US 6,806,005 B2Granted
Method and apparatus for forming resist pattern
AssigneeOki Electric Industry Co., Ltd.
InventorMinoru Watanabe
Life of this patent
Estimating the term…
Abstract
A method of forming a resist pattern on a substrate, comprises the steps of: forming a resist film on the substrate, supplying a developing solution onto the resist film, submerging the substrate and the resist film formed thereon in a rinsing liquid kept in a rinsing tank, and applying ultrasonic vibration to the rinsing liquid to rinse the developing solution from the resist film submerged in the rinsing liquid.
Claims26
A method of forming a resist pattern on a semiconductor substrate, comprising:
- forming a resist film on the semiconductor substrate;
- baking the resist film at a first temperature;
- exposing the resist film to light passing through a mask after baking the resist film at the first temperature;
- baking the resist film at a second temperature after exposing the resist film to the light, wherein the second temperature is different from the first temperature;
- supplying a developing solution on the resist film to remove the resist film, wherein a portion of the resist film remains on the semiconductor substrate;
- and
- rinsing the developing solution from the portion of the resist film by a rinsing liquid to which ultrasonic vibration is applied.
4 more elements
A method of forming a resist pattern on a semiconductor substrate, comprising:
- forming a resist film on the semiconductor substrate;
- baking the resist film at a first temperature;
- irradiating the resist film with an electron beam using an electron beam lithography technique after baking the resist film at the first temperature;
- baking the resist film at a second temperature after irradiating the resist film with the electron beam, wherein the second temperature is different from the first temperature;
- supplying a developing solution on the resist film to remove the resist film, wherein a portion of the resist film remains on the semiconductor substrate;
- and
- rinsing the developing solution from the portion of the resist film by a rinsing liquid to which ultrasonic vibration is applied.
4 more elements
A method for fabricating a semiconductor device, comprising:
- preparing a semiconductor substrate;
- forming a resist film on the semiconductor substrate;
- baking the resist film at a first temperature;
- exposing the resist film to light passing through a mask after baking the resist film at the first temperature;
- baking the resist film at a second temperature after exposing the resist film to the light, wherein the second temperature is different from the first temperature;
- supplying a developing solution on the resist film for patterning the resist film, whereby a patterned resist film is formed on the semiconductor substrate;
- providing a rinsing liquid on the semiconductor substrate on which the patterned resist film is formed;
- and
- applying ultrasonic vibration to the rinsing liquid.
6 more elements
A method for fabricating a semiconductor device, comprising:
- preparing a semiconductor substrate;
- forming a resist film on the semiconductor substrate;
- baking the resist film at a first temperature;
- irradiating the resist film with an electron beam using an electron beam lithography technique after baking the resist film at the first temperature;
- baking the resist film at a second temperature after irradiating the resist film with the electron beam, wherein the second temperature is different from the first temperature;
- supplying a developing solution on the resist film for patterning the resist film, whereby a patterned resist film is formed on the semiconductor substrate;
- providing a rinsing liquid on the semiconductor substrate on which the patterned resist film is formed;
- and
- applying ultrasonic vibration to the rinsing liquid.
6 more elements
A method of forming a resist pattern on a substrate, comprising:
- forming a resist film on the substrate;
- baking the resist film at a first temperature;
- exposing the resist film to light passing through a mask after baking the resist film at the first temperature;
- baking the resist film at a second temperature after exposing the resist film to the light, wherein the second temperature is different from the first temperature;
- supplying a developing solution onto the resist film;
- providing a rinsing liquid onto the substrate so as to cover the resist film;
- and
- applying ultrasonic vibration to the rinsing liquid to rinse the developing solution from the resist film submerged in the rinsing liquid.
5 more elements
A method of forming a resist pattern on a substrate, comprising:
- forming a resist film on the substrate;
- baking the resist film at a first temperature;
- exposing the resist film to light passing through a mask after baking the resist film at the first temperature;
- baking the resist film at a second temperature after exposing the resist film to the light, wherein the second temperature is different from the first temperature;
- supplying a developing solution onto the resist film;
- supplying the resist film formed on the substrate with a rinsing liquid;
- and
- applying ultrasonic vibration to the rinsing liquid to rinse the developing solution from the resist film submerged in the rinsing liquid.
5 more elements
A method of forming a resist pattern on a substrate, comprising:
- forming a resist film on the substrate;
- baking the resist film at a first temperature;
- irradiating the resist film with an electron beam using an electron beam lithography technique after baking the resist film at the first temperature;
- baking the resist film at a second temperature after irradiating the resist film with the electron beam, wherein the second temperature is different from the first temperature;
- supplying a developing solution onto the resist film;
- providing a rinsing liquid onto the substrate so as to cover the resist film;
- and
- applying ultrasonic vibration to the rinsing liquid to rinse the developing solution from the resist film submerged in the rinsing liquid.
5 more elements
A method of forming a resist pattern on a substrate, comprising:
- forming a resist film on the substrate;
- baking the resist film at a first temperature;
- irradiating the resist film with an electron beam using an electron beam lithography technique after baking the resist film at the first temperature;
- baking the resist film at a second temperature after irradiating the resist film with the electron beam, wherein the second temperature is different from the first temperature;
- supplying a developing solution onto the resist film;
- supplying the resist film formed on the substrate with a rinsing liquid;
- and
- applying ultrasonic vibration to the rinsing liquid to rinse the developing solution from the resist film submerged in the rinsing liquid.
5 more elements
Dependencies are inferred from the claim text.