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US 6,805,614 B2Granted
Multilayered CMP stop for flat planarization
AssigneeTexas Instruments Incorporated
InventorSiang Ping Kwok
Life of this patent
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Abstract
A three layer film (116/114/112), such as nitride/oxide/nitride for a CMP stop layer (110). A gap filling material (120) is polished, stopping on the first film (112). The first film (112) is then stripped using an etch chemistry that is selective against removing the second film (114). CMP is then continued stopping on the third film (116).
Claims6
A chemical-mechanical polishing process comprising the steps of:
- chemically mechanically polishing a gap fill material stopping on a first film;
- stripping the first film to expose a second film;
- after exposing the second film, chemically mechanically polishing the gap fill material and the second film stopping on a third film.
Dependencies are inferred from the claim text.