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AssigneeTevet Process Control Technologies Ltd.
InventorOfer Du-Nour
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A method or apparatus for measuring lateral variations of a property such as thickness or refractive index of a transparent film on a semiconductor, in a region of repeated patterning comprises: illuminating over the patterned area with a beam of light of multiple wavelengths, the beam having dimensions to include repeated patterning; detecting the intensity of light reflected over the patterned area for each wavelength; producing a signal defining the variation of the intensity of the detected light as a function of the wavelength of the detected light; decomposing the signal into principal frequencies thereof, determining from the principal frequencies, values of the thickness etc. of the transparent film; and applying the values to repetitions within the repeated patterning.
A method of measuring lateral variations of a property, selected from the group consisting of thickness and refractive index, of a transparent film, in a patterned area comprising repeated patterning, on a substrate, comprising the steps of:
Apparatus for measuring lateral variations of a property, selected from the group consisting of thickness and refractive index, of a transparent film in a patterned area on a substrate, comprising:
In a process for fabricating integrated circuits on a wafer, wherein trenches are formed on a surface of the wafer and the surface then is covered with an oxide layer that fills the trenches, a method of measuring depths of the trenches, comprising the steps of
Dependencies are inferred from the claim text.