Projection exposure apparatus for microlithography
AssigneeCarl Zeiss Semiconductor Manufacturing Technologies AG
InventorsChristian Wagner, Wilhelm Ulrich
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Abstract
The invention relates to a projection exposure apparatus for microlithography at λ<200 nm. The projection exposure apparatus for microlithography has a light source with a wavelength less than 200 nm and a bandwidth, which is less than 0.3 pm, preferably less than 0.25 pm and greater than 0.1 pm. The projection exposure apparatus includes an exclusively refractive projection objective which is made out of a single lens material. The projection objective provides for a maximum image height in the range of 12 mm to 25 mm, an image side numerical aperture in the range of 0.75 up to 0.95 and a monochromatic correction of the wavefront of rms<15‰ of the wavelength of the light source.
Claims14
A projection exposure apparatus for microlithography comprising:
- a light source for transmitting light along a beam path at a wavelength of less than 200 nm and a bandwidth of less than 0.3 pm;
- an exclusively refractive projection objective arranged on said beam path and being made of a single lens material;
- said projection objective having a maximum image height in a range of 12 mm to 25 mm and an image side numerical aperture in a range of 0.75 to 0.95;
- and,
- said projection objective being configured to provide a monochromatic correction of a wavefront to rms<15‰ of said wavelength of said light source.
Dependencies are inferred from the claim text.