Low temperature hydrophobic direct wafer bonding
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsRobert H. Esser, Karl D. Hobart, Francis J. Kub
Life of this patent
Estimating the term…
Loading patent…
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsRobert H. Esser, Karl D. Hobart, Francis J. Kub
Estimating the term…
A method of making an electronic device comprising the steps of: providing a plurality of wafers, each wafer comprising a bonding surface; etching one or more trenches into one or more bonding surfaces, the trenches substantially perpendicular to a preferred direction of diffusion along one or more of the bonding surfaces; rendering the bonding surfaces hydrophobic; and bonding the bonding surfaces together by direct wafer bonding. A semiconductor structure comprising a plurality of wafers, each wafer comprising a bonding surface, one or more bonding surfaces comprising one or more trenches substantially perpendicular to a preferred direction of diffusion along one or more of the bonding surfaces; and the bonding surfaces bonded together by a direct wafer bonding interface.
A semiconductor structure comprising a plurality of wafers;
Dependencies are inferred from the claim text.