Integrated power device with improved efficiency and reduced overall dimensions

An integrated power device, comprising:

• a power circuit comprising a first high-voltage region, a low-voltage region, first and second unidirectional elements connected together between the first high-voltage region and the low-voltage region to define a common intermediate node;
• a biasing circuit connected between the common intermediate node and a second high-voltage region, the biasing circuit comprising a contact pad electrically connected to the common intermediate node;
• an electrical contact region formed on the second high-voltage region;
• an electrical connection line having a first end connected to the contact pad and a second end connected to the electrical contact region;
• an edge structure formed in the power circuit and comprising an equipotential annular region surrounding the power circuit, the contact pad of the biasing circuit being set on top of the equipotential annular region;
• and
• a control circuit that includes the second high-voltage region.

An integrated power device, comprising:

• a power device comprising a first high-voltage region and a low-voltage region;
• a first diode and a second diode connected together in antiseries between the first high-voltage region and the low-voltage region to define a common intermediate node therebetween;
• a biasing circuit connected between the common intermediate node and a second high-voltage region, the biasing circuit comprising a contact pad electrically connected to the common intermediate node;
• an electrical contact region formed on the second high-voltage region;
• an electrical connection line having a first end connected to the contact pad and a second end connected to the electrical contact region;
• an edge structure formed in the power device and comprising an equipotential annular region surrounding the power device, the contact pad of the biasing circuit being set on top of the equipotential annular region;
• and
• a control circuit that includes the second high-voltage region.

An integrated power device, comprising:

• a power device comprising a first high-voltage region and a low-voltage region;
• a first diode and a second diode connected together in antiseries between the first high-voltage region and the low-voltage region to define a common intermediate node therebetween, the first diode comprising an anode region formed by the first high-voltage region and a cathode region formed by a first epitaxial layer set on top of the first high-voltage region, the second diode comprising a cathode region formed by a second epitaxial layer set on top of the first epitaxial layer, and an anode region formed by a body region of the power device, the body region housed in the second epitaxial layer beneath the low-voltage region;
• a biasing circuit connected between the common intermediate node and a second high-voltage region, the biasing circuit comprising a contact pad electrically connected to the common intermediate node;
• an electrical contact region formed on the second high-voltage region;
• an electrical connection line having a first end connected to the contact pad and a second end connected to the second electrical region;
• an edge structure formed in the power device and comprising an equipotential annular region surrounding the power device, the contact pad of the biasing circuit being set on top of the equipotential annular region;
• and
• a control circuit that includes the second high-voltage region.

An integrated power device, comprising:

• a power component comprising a first high-voltage region, a low-voltage region, first and second unidirectional elements connected together between the first high-voltage region and the low-voltage region to define a common intermediate node;
• a biasing circuit connected between the common intermediate node and a second high-voltage region, the biasing circuit comprising a contact pad electrically connected to the common intermediate node;
• an electrical contact region formed on the second high-voltage region;
• an electrical connection line having a first end connected to the contact pad and a second end connected to the electrical contact region;
• an edge structure formed in the power component and comprising an equipotential annular region surrounding the power component, the contact pad of the biasing circuit being set on top of the equipotential annular region;
• a control circuit that includes the second high-voltage region;
• and
• the power component formed on a first chip, and the control circuit formed on a second chip, wherein the second chip is set on top of and affixed to the first chip.

An integrated power device, comprising:

• a power component comprising a first high-voltage region, a low-voltage region, first and second unidirectional elements connected together between the high-voltage region and the low-voltage region to define a common intermediate node;
• a biasing circuit connected between the common intermediate node and a second high-voltage region, the biasing circuit comprising a contact pad electrically connected to the common intermediate node;
• an electrical contact region formed on the second high-voltage region;
• an electrical connection line having a first end connected to the contact pad and a second end connected to the electrical contact region;
• an edge structure formed in the power component and comprising an equipotential annular region surrounding the power component, the contact pad of the biasing circuit being set on top of the equipotential annular region;
• a control circuit that includes the second high-voltage region;
• and
• the power component formed on a first chip, and the control circuit formed on a second chip, wherein the second chip is set on top of and affixed to the first chip, the second chip comprising a substrate fixed to the low-voltage region by means of an adhesive layer.

An integrated power device, comprising:

• a power component comprising a first high-voltage region, a low-voltage region, first and second unidirectional elements connected together between the first high-voltage region and the low-voltage region to define a common intermediate node;
• a biasing circuit connected between the common intermediate node and a second high-voltage region, the biasing circuit comprising a contact pad electrically connected to the common intermediate node;
• an electrical contact region formed on the second high-voltage region;
• an electrical connection line having a first end connected to the contact pad and a second end connected to the electrical contact region;
• an edge structure formed in the power component and comprising an equipotential annular region surrounding the power component, the contact pad of the biasing circuit being set on top of the equipotential annular region;
• a control circuit that includes the second high-voltage region;
• and
• the power component comprising an IGBT transistor having a collector region that comprises the first high-voltage region and an emitter-contact region that comprises the low-voltage region, the IGBT transistor formed in a first chip, and the control circuit formed in a second chip that comprises a substrate fixed to the low-voltage region by means of an adhesive layer such that the second chip is set on top of and is affixed to the first chip, wherein the second chip is set on top of and affixed to the first chip, the second chip comprising a substrate fixed to the low-voltage region by means of an adhesive layer.

An integrated power device comprising:

• a power component including a first high-voltage region, a low-voltage region, a first unidirectional element and a second unidirectional element connected together between said first high-voltage region and said low-voltage region, said first and said second unidirectional elements defining a common intermediate node, the power component formed in a first chip;
• biasing means connected between said common intermediate node and a second high-voltage region;
• and
• a control circuit including the second high-voltage region, the control circuit formed in a second chip that is set on top of and fixed to the first chip, the second chip comprising a substrate fixed to the low-voltage region by means of an adhesive layer made of insulating material.