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US 6,787,878 B1Granted
Semiconductor device having a potential fuse, and method of manufacturing the same
AssigneeRenesas Technology Corp.
InventorsYukihiro Nagai, Tomoharu Mametani, Yoji Nakata, Shigenori Kido, Takeshi Kishida, Akinori Kinugasa, Hiroaki Nishimura, Jiro Matsufusa
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Abstract
In a semiconductor device, an active region is formed in a semiconductor substrate separated by a plurality of isolation regions. A plurality of surface insulating films of different thickness are formed separately on the active region. A plurality of conductive films are formed on the respective insulating films. Then, one of the surface insulating film having smaller thickness is caused to break down to work as an electric fuse.
Claims1
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a plurality of trenches, having an interior surface formed by side surfaces and a bottom surface, formed in the semiconductor substrate;
- an etching stopper film embedded at least in a selected one of the trenches;
- a surface insulating film formed along the side surfaces and bottom surface lining the interior surface of other trenches and along a surface of the semiconductor substrate;
- and
- a conductive film formed at least on the surface insulating film, wherein the surface insulating film is sufficiently thin to be broken down for forming an electric fuse.
4 more elements
Dependencies are inferred from the claim text.