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US 6,787,854 B1Granted
Method for forming a fin in a finFET device
AssigneeAdvanced Micro Devices, Inc.
InventorsChih-Yuh Yang, Shibly S. Ahmed, Srikanteswara Dakshina-Murthy, Cyrus E. Tabery, Haihong Wang, Bin Yu
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Abstract
A method for forming a fin structure on a silicon-on-insulator (SOI) wafer that includes a silicon layer on an insulating layer that is formed over a semiconductor substrate includes etching the silicon layer using a first etch procedure, etching, following the first etch procedure, the silicon layer using a second etch procedure, and etching, following the second etch procedure, the silicon layer using a third etch procedure to form a T-shaped fin structure.
Claims5
A semiconductor device, comprising:
- a substrate;
- an insulating layer formed on the substrate;
- a fin structure having a T-shaped cross-section and being formed on a portion of the insulating layer, the fin structure including a lower portion and an upper portion, wherein a width of the upper portion of the fin structure ranges from about 150 Å to 600 Å and a width of the lower portion of the fin structure ranges from about 90 Å to 300 Å;
- and
- a gate formed on the insulating layer and surrounding the T-shaped fin structure.
2 more elements
A semiconductor device comprising:
- a fin structure comprising an upper portion and a lower portion, a width of the upper portion of the fin structure ranging from about 150 Å to 600 Å and a width of the lower portion of the fin structure ranging from about 90 Å to 300 Å;
- and
- a gate structure formed adjacent the fin structure.
Dependencies are inferred from the claim text.